SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated175째Coperatingtemperature)

•Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

SIPMOSPowerTransistor(NchannelEnhancementmodeLogicLevelAvalanche-rateddv/dtrated175째Coperatingtemperature)

•Nchannel •Enhancementmode •LogicLevel •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

SIPMOSPowerTransistor(Quad-channelEnhancementmodeLogiclevelAvalanche-rateddv/dtrated)

•Quad-channel •Enhancementmode •Logiclevel •Avalanche-rated •dv/dtrated

CustomerSpecification

Construction Diameters(In) 1)Component13X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.011Wall,Nom.PVC,SemiRigid0.049 (1)Color(s) CondColorCondColorCondColor 1BROWN2BLUE3BLACK 2)CableAssembly3ComponentsCabled a)Twists:8.0Twists/foot(m

CustomerSpecification

Construction Diameters(In) 1)Component13X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.011Wall,Nom.PVC,SemiRigid0.049 (1)Color(s) CondColorCondColorCondColor 1BROWN2BLUE3BLACK 2)CableAssembly3ComponentsCabled a)Twists:8.0Twists/foot(m

0.1/2.5GHzSiMMICBUFFERAMPLIFIERS

DESCRIPTION TheSTB7102,STB7103andSTB7104designedforMobilePhoneapplications(0.1/2.5GHz),areanhighisolationSiMMICBufferAmplifiers.ManufacturedinthethirdgenerationofSTproprietarybipolarprocess,theyoffersanexcellentisolationandagoodlinearityusingalowcurrentco

Smooth,hightorque,rollerratchethandle

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MiniatureAudioEpoxyPotted104Series

文件：123.17 Kbytes Page：1 Pages