ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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Bipolar Junction Transistors

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

• SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING • MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly impro

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

•SEMEFAB DESIGNED AND DIFFUSED DIE •HIGH VOLTAGE •FAST SWITCHING (tf = 40ns) •EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE •HIGH ENERGY RATING •EFFICIENT POWER SWITCHING •MILITARY AND HI–REL OPTIONS FEATURES • Multi–base design for efficient energy distribution across the

SILICON POWER NPN TRANSISTOR

BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features • Multi–base for efficient energy distribution acrossthe chip resulting in significantly improved switching and energy ratings acro

Bipolar Junction Transistors

Bipolar Junction Transistors

SILICON POWER NPN TRANSISTOR

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