•SEMEFAB DESIGNED AND DIFFUSED DIE

•HIGH VOLTAGE

•FAST SWITCHING (tf = 40ns)

•EXCEPTIONAL HIGH TEMPERATURE

PERFORMANCE

•HIGH ENERGY RATING

•EFFICIENT POWER SWITCHING

•MILITARY AND HI–REL OPTIONS

FEATURES

• Multi–base design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.

• Triple Guard Rings for improved control of high voltages.