ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

•SEMEFAB DESIGNED AND DIFFUSED DIE •HIGH VOLTAGE •FAST SWITCHING (tf = 40ns) •EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE •HIGH ENERGY RATING •EFFICIENT POWER SWITCHING •MILITARY AND HI–REL OPTIONS FEATURES • Multi–base design for efficient energy distribution across the

Bipolar Junction Transistors