POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time

POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS

The BUD45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: • Low

High Speed, High Gain Bipolar NPN Power Transistor

文件：227.88 Kbytes Page：11 Pages

High Speed, High Gain Bipolar NPN Power Transistor

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage ti

High Speed, High Gain Bipolar NPN Power Transistor

文件：227.88 Kbytes Page：11 Pages