TrenchMOS??logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Features ■ Very low on-state resistance ■ Q101 compliant ■ 175 °C rated ■ Logic level compatible. Applications ■ Automotive syste

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  A

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

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Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

RF amplifier

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Double Coated Tape with Quick Bonding Adhesive 360

文件：40.21 Kbytes Page：4 Pages

Double Coated Tape with Quick Bonding Adhesive

文件：40.21 Kbytes Page：4 Pages

Double Coated Tape with Quick Bonding Adhesive 360

文件：40.21 Kbytes Page：4 Pages