isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 75V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  A

TrenchMOS??logic level FET

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N-channel TrenchMOS logic level FET

Electronic, 5 C #14 Str TC, PVC Ins, PVC Jkt

Product Description Electronic, 5 Conductor 14AWG (19x27) Tinned Copper, PVC Insulation, PVC Outer Jacket

M23 Power Single-Ended Cordset: Female, angled, 19-pin(18PE), black body, 120 V AC/DC, 16x8 A 2x10 A ; PUR black cable, 16x0.5 mm² 3x1.0 mm²

Product Description M23 Power Single-Ended Cordset: Female, angled, 19-pin(18+PE), black body, 120 V AC/DC, 16x8 A + 2x10 A ; PUR black cable, 16x0.5 mm² + 3x1.0 mm²

Wideband Voltage Feedback Amplifier

GENERAL DESCRIPTION The AD9621 is one of a family of very high speed and wide bandwidth amplifiers utilizing a voltage feedback architecture. These amplifiers define a new level of performance for voltage feedback amplifiers, especially in the categories of large signal bandwidth, slew rate, sett

60 GHz Millimeterwave Short Data Link

GENERAL DESCRIPTION The ADMV9623 is a complete millimeterwave (mmWave) wireless connectivity solution in a small printed circuit assembly (PCA) format. All millimeterwave signals are confined to the printed circuit assembly, simplifying implementation. Wireless transmission is achieved using

LDPE Sheet Metal Plugs

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