TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Logic level compatible. Applications ■ Automotive and general pu

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Lo

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Lo

N-channel TrenchMOS logic level FET

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Lo

TrenchMOS transistor Logic level FET

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

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N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

文件：199.01 Kbytes Page：14 Pages

N-channel TrenchMOS logic level FET

文件：199.01 Kbytes Page：14 Pages

RS232, #24-3c, SR-PVC, O/A FoilBraid, PVC Jkt, CMG

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), PVC jacket.

10-Bit, 125/105 MSPS, 1.8 V Dual Analog-to-Digital Converter (ADC)

GENERAL DESCRIPTION The AD9608 is a monolithic, dual-channel, 1.8 V supply, 10-bit, 105 MSPS/125 MSPS analog-to-digital converter (ADC) that features a high performance sample-and-hold circuit and an on-chip voltage reference. The product uses multistage differential pipeline architecture with ou

600V, 10A N-Channel MOSFET

General Description The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed aval

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

1.8 V Dual Analog-to-Digital Converter (ADC)

文件：1.1012 Mbytes Page：41 Pages