TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Logic level compatible. Applications ■ Automotive and general

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  A

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AE

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  L

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Logic level compatible. Applications ■ Automotive and general pu

N-channel TrenchMOS logic level FET

文件：388.46 Kbytes Page：13 Pages

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

文件：205.46 Kbytes Page：12 Pages

TrenchMOS transistor Logic level FET

文件：63.85 Kbytes Page：8 Pages

TrenchMOS transistor Logic level FET

文件：63.95 Kbytes Page：8 Pages

TrenchMOS transistor Logic level FET

N-channel TrenchMOS logic level FET

High Perform Instr, 9 Pr #22 Str TC, PVC Ins E2, OS, PVC Jkt, PLTC

Product Description High Performance Instrumentation, 9 Pair 22AWG (7x30) Tinned Copper, PVC Insulation E2 Color Code, Overall Beldfoil® Shield, PVC Outer Jacket, PLTC

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