isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AE

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and genera

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Logic level compatible. Applications ■ Automotive and general p

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AE

TrenchMOS logic level FET

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N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

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TrenchMOS transistor Logic level FET

N-channel TrenchMOS logic level FET

RS232, #24-10pr, SR-PVC, O/A Foil, PVC Jkt, CMG, 75Ω

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, 10 twisted pairs, overall Beldfoil® shield (100 coverage), 24 AWG stranded tinned copper drain wire (continued), PVC jacket.

RS-232, 10PR #24 Str TC, PO ins, OS, LSZH Jkt, 300V

Product Description 10-Pair, 24 AWG stranded (7x32) TC conductors, PE insulation, twisted pairs, overall Beldfoil shield (100 coverage), 24 AWG stranded TC drain Wire, LSZH jacket, Flame resistance IEC 60332-3C

MACHINE SCREW PAN PHILLIPS 10-32

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Simulators.

文件：180.95 Kbytes Page：4 Pages

TCXO Specification

文件：208.77 Kbytes Page：4 Pages