TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and genera

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and genera

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Logic level compatible. Applications ■ Automotive and general pu

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

TrenchMOS™ logic level FET

1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. 2. Features n TrenchMOS™ technology n Q101 compliant n 175 °C rated n Logic level compatible. 3. Applications n Automotive and

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits ■ Low conduct

BUK9508-55A - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

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RS-232, #24-8pr, SR-PVC, O/A Foil, PVC Jkt, CMG, 75Ω

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, 8 twisted pairs, overall Beldfoil® shield (100 coverage), 24 AWG stranded tinned copper drain wire (continued), PVC jacket.

RS-232, 8PR #24 Str TC, PO ins, OS, LSZH Jkt, 300V, Dca

Product Description 8-Pair, 24 AWG stranded (7x32) TC conductors, PE insulation, twisted pairs, overall Beldfoil shield (100% coverage), 24 AWG stranded TC drain Wire, LSZH jacket, Flame resistance IEC 60332-3C

1.65 GHz Clock Fanout Buffer with Output Dividers and Delay Adjust

GENERAL DESCRIPTION The AD9508 provides clock fanout capability in a design that emphasizes low jitter to maximize system performance. This device benefits applications like clocking data converters with demanding phase noise and low jitter requirements. There are four independent differential c

Computer Cable for EIA RS-232 Applications

文件：33.27 Kbytes Page：3 Pages

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages