TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). Features ■ Low on-state resis

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 30V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Lo

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

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RS232, #24-7pr, SR-PVC, O/A Foil, PVC Jkt, CMG, 75Ω

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, 7 twisted pairs, overall Beldfoil® shield (100 coverage), 24 AWG stranded tinned copper drain wire (continued), PVC jacket.

RS-232, 7PR #24 Str TC, PO ins, OS, LSZH Jkt, 300V, Dca

Product Description 7-Pair, 24 AWG stranded (7x32) TC conductors, PE insulation, twisted pairs, overall Beldfoil shield (100% coverage), 24 AWG stranded TC drain Wire, LSZH jacket, Flame resistance IEC 60332-3C

MACHINE SCREW PAN PHILLIPS 10-32

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24 AWG stranded (7x32) TC conductors, semi-rigid PVC insulation

文件：99.44 Kbytes Page：3 Pages

Computer Cable for EIA RS-232 Applications

文件：33.38 Kbytes Page：3 Pages