TrenchMOS횚 transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 30V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AE

N-channel TrenchMOS logic level FET

RS232, #24-5pr, SR-PVC, O/A Foil, PVC Jkt, CMG, 75Ω

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, 5 twisted pairs, overall Beldfoil® shield (100 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket.

3M??Adhesive Transfer Tape 9505

文件：141.6 Kbytes Page：5 Pages

4-40 FLAT HEAD SCREW

文件：237.15 Kbytes Page：1 Pages

Computer Cable for EIA RS-232 Applications

文件：33.38 Kbytes Page：3 Pages

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages