isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Q10

N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Q10

BUK9277-55A - N-channel TrenchMOS logic level FET

TrenchMOS logic level FET

文件：319.45 Kbytes Page：13 Pages

N-channel TrenchMOS logic level FET

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

N-channel TrenchMOS logic level FET

文件：299.19 Kbytes Page：13 Pages

Clamp Sensors

文件：223.08 Kbytes Page：5 Pages

Octal LNA/VGA/AAF/14-Bit ADC and CW I/Q Demodulator

文件：1.02454 Mbytes Page：48 Pages

Octal LNA/VGA/AAF/14-Bit ADC and CW I/Q Demodulator

文件：835.26 Kbytes Page：49 Pages

Octal LNA/VGA/AAF/14-Bit ADC and CW I/Q Demodulator

文件：835.26 Kbytes Page：49 Pages

Octal LNA/VGA/AAF/14-Bit ADC and CW I/Q Demodulator

文件：1.02454 Mbytes Page：48 Pages