TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9214-30A in SOT428 (D-PAK). Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rat

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  L

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOSTM technology ■ Q101 compliant ■ 175 °C rated ■ Logic level compatibl

BUK9214-30A - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

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TrenchMOS logic level FET

MOSFET N-CH 80V DPAK

包装：管件 描述：MOSFET N-CH 80V DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

10-Bit, 65/80/105 MSPS 3 V A/D Converter

PRODUCT DESCRIPTION The AD9214 is a 10-bit monolithic sampling analog-to-digital converter (ADC) with an on-chip track-and-hold circuit, and is optimized for low cost, low power, small size, and ease of use. The product operates up to 105 MSPS conversion rate with outstanding dynamic performance

Customer Specification

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LVDS OSCILLATOR

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