N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56

1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56

1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica

N-channel 100 V, 12 m廓 standard level MOSFET in LFPAK56

N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56

N-channel 100 V, 12 m廓 standard level MOSFET in LFPAK56

文件：303.16 Kbytes Page：13 Pages

N-channel 40 V, 12 m廓 standard level MOSFET in LFPAK56

N-channel 40 V, 12 m standard level MOSFET in LFPAK56

文件：320.9 Kbytes Page：13 Pages

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

文件：203.11 Kbytes Page：14 Pages

封装/外壳：SC-100，SOT-669 包装：管件 描述：MOSFET N-CH 80V LFPAK56 PWR-SO8 分立半导体产品 晶体管 - FET，MOSFET - 单个

MOSFET N-CH 80V LFPAK