isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits •

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive and general

TrenchMOS standard level FET

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N-channel TrenchMOS standard level FET

BUK7675-100A - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

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TrenchMOS transistor Standard level FET

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TrenchMOS transistor Standard level FET

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET

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16-Bit, 100 kSPS, Differential ADC

GENERAL DESCRIPTION The AD7675 is a 16-bit, 100 kSPS, charge redistribution SAR, fully differential analog-to-digital converter that operates from a single 5 V power supply. The part contains a high speed 16-bit sampling ADC, an internal conversion clock, error correction circuits, and both seria

16-Bit 1 MSPS SAR Unipolar ADC with Ref

GENERAL DESCRIPTION The AD7667is a 16-bit, 1 MSPS, charge redistribution SAR analog-to-digital converter that operates from a single 5 V power supply. The part contains a high speed 16-bit sampling ADC, an internal conversion clock, internal reference, error correction circuits, and both serial

16-Bit, 250 kSPS, Unipolar/Bipolar Programmable Input PulSAR ADC

GENERAL DESCRIPTION The AD7610 is a 16-bit charge redistribution successive approximation register (SAR), architecture analog-to-digital converter (ADC) fabricated on Analog Devices, Inc.’s iCMOS high voltage process. The device is configured through hardware or via a dedicated write only seria

16-Bit, 750 kSPS, Unipolar/Bipolar Programmable Input PulSAR ADC

GENERAL DESCRIPTION The AD7612 is a 16-bit charge redistribution successive approximation register (SAR), architecture analog-to-digital converter (ADC) fabricated on Analog Devices, Inc.’s iCMOS high voltage process. The device is configured through hardware or via a dedicated write only seria

SPACERS & STANDOFFS

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