isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

TrenchMOS standard level FET

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BUK7660-100A - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

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T-1 Subminiature Lamps

T-1¼ Subminiature Lamps

Precision LCR Meter

Features: • Frequency range: 10 Hz to 2 MHz • 0.05 basic measurement accuracy • 7-digit measurement resolution • 7.0 TFT, 800×480 color screen • Programmable test voltage and current • Auto ranging • Test setup and measurement data storage • Four bnc terminal Kelvin connection • Standar

CMOS Voltage Converters

The Intersil ICL7660 and ICL7660A are monolithic CMOS power supply circuits which offer unique performance advantages over previously available devices. The ICL7660 performs supply voltage conversions from positive to negative for an input range of +1.5V to +10.0V resulting in complementary output

SIPS Hi-Shock Remote Transducer

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Cover plate

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