TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

TrenchMOS transistor Standard level FET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 42A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

TrenchMOS transistor standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching application

N-channel TrenchMOS standard level FET