isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

N-channel TrenchMOS standard level FET

TrenchMOS standard level FET

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N-channel TrenchMOS standard level FET

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16-Bit, 10MSPS PulSAR Differential ADC

GENERAL DESCRIPTION The AD7626 is a 16-bit, 10 MSPS, charge redistribution successive approximation register (SAR) based architecture analog-to-digital converter (ADC). FEATURES Throughput: 10 MSPS SNR: 91.5 dB 16-bit no missing codes INL: ±0.45 LSB DNL: ±0.35 LSB

18-Bit, 5 MSPS PulSAR Differential ADC

GENERAL DESCRIPTION The AD7960 is an 18-bit, 5 MSPS, charge redistribution successive approximation (SAR), analog-to-digital converter (ADC). The SAR architecture allows unmatched performance both in noise and in linearity. The AD7960 contains a low power, high speed, 18-bit sampling ADC, an inte

CABLE CLAMPS AND TIES

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16-Bit, 10 MSPS, PulSAR Differential ADC

文件：1.44917 Mbytes Page：28 Pages

16-Bit, 10 MSPS, PulSAR Differential ADC

文件：1.32216 Mbytes Page：28 Pages