TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive systems ■

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

TrenchMOS standard level FET

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 75V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

BUK7609-75A - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

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8-Channel Differential DAS with 18-Bit, Bipolar, Simultaneous Sampling ADC

GENERAL DESCRIPTION The AD7609 is an 18-bit, 8-channel, true differential, simultaneous sampling analog-to-digital data acquisition system (DAS). The part contains analog input clamp protection, a second-order antialiasing filter, a track-and-hold amplifier, an 18-bit charge redistribution succes

HOLE PLUGS and BUSHINGS

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UMTS Band 4 / CDMA AWS-1 Duplexer

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8-Channel Differential DAS with 18-Bit

文件：799.95 Kbytes Page：36 Pages

8-Channel Differential DAS

文件：878.55 Kbytes Page：37 Pages