isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive and general

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS standard level FET

TrenchMOS standard level FET

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N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

文件：195.63 Kbytes Page：13 Pages

TrenchMOS transistor Standard level FET

文件：64.31 Kbytes Page：8 Pages

TrenchMOS transistor Standard level FET

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

文件：361.69 Kbytes Page：13 Pages

LC2MOS 5 us 8-Bit ADC with Track/Hold

GENERAL DESCRIPTION The AD7575 is a high speed 8-bit ADC with a built-in track/hold function. The successive approximation conversion technique is used to achieve a fast conversion time of 5 µs, while the built-in track/hold allows full-scale signals up to 50 kHz (386 mV/µs slew rate) to be digit

LC2MOS 5ms 8-Bit ADC with Track/Hold

GENERAL DESCRIPTION The AD7575 is a high speed 8-bit ADC with a built-in track/hold function. The successive approximation conversion technique is used to achieve a fast conversion time of 5 µs, while the built-in track/hold allows full-scale signals up to 50 kHz (386 mV/µs slew rate) to be digit

LC2MOS 5ums 8-Bit ADC with Track/Hold

GENERAL DESCRIPTION The AD7575 is a high speed 8-bit ADC with a built-in track/hold function. The successive approximation conversion technique is used to achieve a fast conversion time of 5 µs, while the built-in track/hold allows full-scale signals up to 50 kHz (386 mV/µs slew rate) to be digit

LC2MOS 5 us 8-Bit ADC with Track/Hold

GENERAL DESCRIPTION The AD7575 is a high speed 8-bit ADC with a built-in track/hold function. The successive approximation conversion technique is used to achieve a fast conversion time of 5 µs, while the built-in track/hold allows full-scale signals up to 50 kHz (386 mV/µs slew rate) to be digit

8-Bit ADC with Track/Hold

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