TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen

TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7506-55B in SOT78 (TO-220AB) BUK7606-55B in SOT404 (D2-PAK). Features ■ Very low on-state resistan

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). Features ■ Very low on-state resistance. ■

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 75V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

TrenchMOS transistor Standard level FET

BUK7506-55A - N-channel TrenchMOS standard level FET

isc N-Channel MOSFET Transistor

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N-channel TrenchMOS standard level FET

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DC-DC CONVERTER BOOST(STEP-UP) VIN AS LOW AS 0.85V MICRO-POWER SYNC

DESCRIPTION The A7506 is synchronous, fixed frequency, step-up DC/DC converters delivering high efficiency in a SOT-26 package. Capable of supplying 3.3V at 100mA from a single AA cell input, the device contain an internal NMOS switch and PMOS synchronous rectifier. A switching frequency of 1.0

CMOS 8- AND 16-CHANNEL ANALOG MULTIPLEXERS

GENERAL DESCRIPTION The AD7506 is a monolithic CMOS 16-channel analog multiplexer packaged in a 28-pin DIP or a 28-terminal surface mount package.

CMOS 8-and 16-Channel Analog Multiplexers

GENERAL DESCRIPTION The AD7506 is a monolithic CMOS 16-channel analog multiplexer packaged in a 28-pin DIP or a 28-terminal surface mount package.

Locking Devices

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Common Mode Inductors/EMI Filters

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