型号 功能描述 生产厂家&企业 LOGO 操作

PowerMOStransistorFastrecoverydiodeFET

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelope. FREDFETwithfastrecoveryreversediode,particularlysuitableformotorcontrolapplications,eg.infullbridgeconfigurationsforwhichfasterrecoverycharacteristicssimplifydesignforinductive

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainSourceVoltage :VDSS=500V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposesw

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOStransistorFastrecoverydiodeFET

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope. FREDFETwithfastrecoveryreversediode,particularlysuitableformotorcontrolapplications,eg.Infullybridgeconfigurationsforwhichfasterecoverycharacteristicssimplifydesignforindu

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PowerMOStransistorFastrecoverydiodeFET

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope. FREDFETwithfastrecoveryreversediode,particularlysuitableformotorcontrolapplications,eg.Infullybridgeconfigurationsforwhichfasterecoverycharacteristicssimplifydesignforindu

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PowerMOStransistorFastrecoverydiodeFET

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope. FREDFETwithfastrecoveryreversediode,particularlysuitableformotorcontrolapplications,eg.Infullybridgeconfigurationsforwhichfasterecoverycharacteristicssimplifydesignforindu

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

638MSeriesD-SubConnectors|MachinedPins|HighDensity|0.090(2.29mm)ContactSpacingX0.078(1.98mm)RowSpacing|Vertical|Receptacle

Features HighDensityWithMachinedContacts 0.090(2.29mm)ContactSpacingX0.078(1.98mm)RowSpacing PlugandReceptaclein15,26,44or62ContactSizes PinandSocketContactMatingDesignwithP.C.TailTermination MetalShellProvidesEMI/RFIShielding,

EDACEDAC, All Rights Reserved.

亚得电子亚得电子(东莞)有限公司

EDAC

638SeriesD-SubConnectors|VerticalHighDensity|PCBMount|MetalBody|Receptacle

Features PlugandReceptaclein15,26,44,62or78ContactSizes PinandSocketContactMatingDesignwithP.C.TailTermination MetalShellProvidesEMI/RFIShielding,PlugShellIndentsprovideGroundingandAdditionalMatingRetention GroundingFeaturesincludeBoardlockforExcep

EDACEDAC, All Rights Reserved.

亚得电子亚得电子(东莞)有限公司

EDAC

PNPEPITAXIALSILICONTRANSISTOR

SWITCHINGANDAMPLIFIERAPPLICATIONS •ComplementtoBC635/637/639

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SurfaceMountable

文件:135.67 Kbytes Page:2 Pages

OSCILENT

Oscilent Corporation

OSCILENT

600Hand600NHseries

文件:324.88 Kbytes Page:8 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

BUK638产品属性

  • 类型

    描述

  • 型号

    BUK638

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    PowerMOS transistor Fast recovery diode FET

更新时间:2024-5-17 23:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP/恩智浦
20+
TO-220AB
36900
原装优势主营型号-可开原型号增税票
NPX/飞利浦
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
PHILIPS/飞利浦
22+
TO-220
25000
只做原装进口现货,专注配单
NXP/恩智浦
22+
TO-220AB
50000
只做原装假一罚十,欢迎咨询
PHILIPS/飞利浦
21+ROHS
21368
原厂授权一级代理,专业海外优势订货,价格优势、品种
nxp
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
NXP/恩智浦
TO-220
265209
假一罚十原包原标签常备现货!
NPX
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
NXP/恩智浦
23+
TO-220AB
50000
全新原装正品现货,支持订货
PHILIPS
23+
TO-TO-220
37650
全新原装真实库存含13点增值税票!

BUK638芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
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  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

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