N-channel TrenchMOS intermediate level FET

1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

N-channel TrenchMOS intermediate level FET

BUK6218-40C - N-channel TrenchMOS intermediate level FET

N-channel TrenchMOS intermediate level FET

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Digital Temperature Sensor

Features ± 0.2 °C (from -10°C to 65 °C, for AS6212) ± 0.3 °C (from -40°C to -10°C and from 65°C to 85°C, for AS6212) ± 0.5 °C (for remaining temperature span, for AS6212) 6 μA @ Operation (typical, @ 4 Hz) 0.1 μA @ Standby (typical) 1.71 – 3.6 V (0 °C to 125 °C) 1.5 mm x 1 mm (WLCSP)

Digital Temperature Sensor

Features ± 0.2 °C (from -10°C to 65 °C, for AS6212) ± 0.3 °C (from -40°C to -10°C and from 65°C to 85°C, for AS6212) ± 0.5 °C (for remaining temperature span, for AS6212) 6 μA @ Operation (typical, @ 4 Hz) 0.1 μA @ Standby (typical) 1.71 – 3.6 V (0 °C to 125 °C) 1.5 mm x 1 mm (WLCSP)

Test Probe Tips For 060 Series Probes

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22 (7/30) AWG Tinned Copper

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AUTOMOTIVE GRADE

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