型号 功能描述 生产厂家 企业 LOGO 操作
BUK553

PowerMOS transistor Logic level FET

文件:97.45 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications

Philips

飞利浦

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

ISC

无锡固电

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications

Philips

飞利浦

PowerMOS transistor Voltage clamped logic level FET

GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications. It has built-in zener diodes providing active drain voltage clamping.

Philips

飞利浦

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

ISC

无锡固电

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applic

Philips

飞利浦

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

ISC

无锡固电

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applic

Philips

飞利浦

PowerMOS transistor Voltage clamped logic level FET

ETC

知名厂家

PowerMOS transistor Logic level FET

文件:97.45 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET N-CH 60V 21A Automotive 3-Pin(3+Tab) TO-220AB

ETC

知名厂家

Trans MOSFET N-CH 60V 20A Automotive 3-Pin(3+Tab) TO-220AB

ETC

知名厂家

PowerMOS transistor Logic level FET

文件:97.45 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

METALLIZED POLY ETHYLENE TEREPHTHALATE FILM CAPACITORS

FEATURES 1. Flame-retardant case and resin. 2. Withstand long life (2000Hr 85°C 1.4 RV). 3. High and stable insulation resistance. 4. All items have 5 mm lead spacing and suitable for standard PWB. 5. Tape and reel packaging by straight lead wire is available. Dual marking is applied so

MATSUO

PECL Output

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OSCILENT

Low additive phase jitter RMS

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IDT

SURFACE MOUNT BATTERY CLIPS/CONTACTS

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KEYSTONE

Keystone Electronics Corp.

3mm LED CBI Circuit Board Indicator Bi-level

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Dialight

BUK553产品属性

  • 类型

    描述

  • 型号

    BUK553

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    PowerMOS transistor Logic level FET

更新时间:2025-12-25 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
CSR
24+
BGA
17860
公司现货库存,支持实单
VB
25+
TO220AB
5012
原装正品,假一罚十!
Nexperia
25+
N/A
20000
PHI
24+
TO-220
27500
原装正品,价格最低!
PHI
24+
NA
6000
只做原装正品现货 欢迎来电查询15919825718
恩XP
24+
N/A
6000
原厂原装,价格优势,欢迎洽谈!
23+
T0-220
1
恩XP
23+
标准封装
6000
正规渠道,只有原装!
PHI
NEW
TO-220
12300
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订

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