POWER MOS TRANSISTOR

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies(SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

POWER MOS TRANSISTOR

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies(SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

High speed switching

DESCRIPTION • High speed switching APPLICATIONS • use in Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application

High speed switching

DESCRIPTION • High speed switching APPLICATIONS • use in Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application

POWER MOS TRANSISTOR

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies(SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 450V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 500V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 500V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 600V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 600V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

POWER MOS TRANSISTOR

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