Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon diffused power transistor

General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. Features and benefits • Low thermal resistance • Fast switching Applications • Inverters • Motor control systems • Electronic lighting ballasts • DC-to-DC c

Silicon diffused power transistor

General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. Features and benefits ■ Low thermal resistance ■ Fast switching Applications ■ Electronic lighting ballasts ■ DC-to-DC converters ■ Inverters ■ Mot

Silicon diffused power transistor

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

High voltage bipolar transistors for lighting, SMPS and industrial applications

Silicon diffused power transistor

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon diffused power transistor

文件：158.12 Kbytes Page：13 Pages

High voltage bipolar transistors for lighting, SMPS and industrial applications

封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：TRANS NPN 400V 4A TO220F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Diffused Power Transistor

文件：93.36 Kbytes Page：12 Pages

D챕tails complets sur le site du fabricant:

IDEAL # 103 (103) Description du produit Détails complets sur le site du fabricant: IDEAL INDUSTRIES, INC

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

Smooth, high torque, roller ratchet handle

文件：254.3 Kbytes Page：3 Pages