Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：TRANS NPN 400V 4A TO220F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Diffused Power Transistor

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Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

D챕tails complets sur le site du fabricant:

IDEAL # 103 (103) Description du produit Détails complets sur le site du fabricant: IDEAL INDUSTRIES, INC

Smooth, high torque, roller ratchet handle

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