Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage • High speed switching APPLICATIONS • Horizontal deflection for color TV • Switch mode power supplies.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage • High speed switching APPLICATIONS • Horizontal deflection for color TV • Switch mode power supplies.

HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH313 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhanceswitching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ SGS-THOMSON PREFERR

Silicon NPN Power Transistors

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HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR

isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Speed • High Voltage • Built-in Integrated Diode APPLICATIONS • Horizontal deflection stage in standard and high resolution Displays for TV’s and monitors.

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages