DESCRIPTION

The BUB806/807 and BUBO6FI/807F! are silicon

epitaxial planar NPN power transistors in Dar-

lington configuration with integrated base-emitter

speed-up diode, mounted respectively in TO-220

plastic package and ISOWATT220 fully isolated

package. They are high voltage, high current de-

vices for fast switching applications. In particular

they can be used in horizontal output stages of

110°CRT video displays. The BU8O6/FI are prima-

rily intended for large screen, while the BU807/FI

are for medium and small screens.