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BU180晶体管资料

  • BU180别名:BU180三极管、BU180晶体管、BU180晶体三极管

  • BU180生产厂家:美国得克萨斯仪表公司

  • BU180制作材料:Si-N+Darl+Di

  • BU180性质:电视 (TV)_行输出 (HA)

  • BU180封装形式:直插封装

  • BU180极限工作电压:320V

  • BU180最大电流允许值:10A

  • BU180最大工作频率:<1MHZ或未知

  • BU180引脚数:3

  • BU180最大耗散功率:50W

  • BU180放大倍数:β>200

  • BU180图片代号:B-62

  • BU180vtest:320

  • BU180htest:999900

  • BU180atest:10

  • BU180wtest:50

  • BU180代换 BU180用什么型号代替:BU284,BU289,BU826,

BU180价格

参考价格:¥8.9384

型号:BU180Z-178-HT 品牌:On Shore 备注:这里有BU180多少钱,2026年最近7天走势,今日出价,今日竞价,BU180批发/采购报价,BU180行情走势销售排行榜,BU180报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BU180

isc Silicon NPN Darlington Power Transistor

文件:238.54 Kbytes Page:2 Pages

ISC

无锡固电

BU180

Silicon NPN Darlington Power Transistor

文件:125.8 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BU180

Trans Darlington NPN 200V 10A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans Darlington NPN 200V 10A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Darlington Power Transistor

文件:126.4 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Darlington Power Transistor

文件:95.48 Kbytes Page:2 Pages

ISC

无锡固电

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

MOTOROLA

摩托罗拉

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

NTE

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

BU180产品属性

  • 类型

    描述

  • Number of Elements per Chip:

    1

  • Minimum Operating Temperature:

    -55ᄀC

  • Minimum DC Current Gain:

    200@5A@5V

  • Maximum Operating Temperature:

    150ᄀC

  • Maximum Emitter Base Voltage:

    8V

  • Maximum Continuous DC Collector Current:

    10A

  • Maximum Collector Emitter Voltage:

    200V

  • Maximum Collector Base Voltage:

    320V

  • Maximum Base Emitter Saturation Voltage:

    2@20mA@4AV

  • Configuration:

    Single

更新时间:2026-5-14 18:10:00
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