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BTS4价格
参考价格：￥15.1305
型号：BTS410E2E3062ABUMA1 品牌：INF 备注：这里有BTS4多少钱，2026年最近7天走势，今日出价，今日竞价，BTS4批发/采购报价，BTS4行情走势销售排行榜，BTS4报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 |   | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
High-side switch PROFET® * High-side switch * Short-circuit protection * Overtemperature protection * Overload protection * Load dump protection?) * Undervoltage and overvollafle sshutdown with auto-restart and hysteresis * Reverse battery protection * Input and status protection * Clamp of negative output | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
High-side switch High-side switch Short-circuit protection Overtemperature protection Overload protection Input protection Open-load detection in off-condition Undervoltage shutdown Negative transient voltage peak at inductive load limited to -10 V In case of a fault, the outputs trips and remains open | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | INFINEON 英飞凌 | | ||
Smart High-Side Power Switch 1 Channel: 1 x 200m? General Description N channel vertical power MOSFET with charge pump ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Short-circuit protection • Current limitation • Overload protecti | INFINEON 英飞凌 | | ||
Smart High-Side Power Switch 1 Channel: 1 x 200m? General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit protection • Current limitation • Overload protection • Overvol | INFINEON 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | INFINEON 英飞凌 | | ||
Smart High-Side Power Switch One Channel: 60m??Status Feedback General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protective functions Applications • µC compatible high-side power switch with d | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla | INFINEON 英飞凌 | | ||
High-side switch PROFET Preliminary Data @ High-side switch @ Short-circuit protection ® Overtemperature protection ® Overload protection | @ Load dump protection up to 80 V @® Undervoltage and overvoltage shutdown with auto-restart and hysteresis @ Reverse battery protection @ Input protection @ Induct | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Load dump and reverse battery protection1) ● Cla | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Load dump and reverse battery protection1) ● Cla | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Load dump and reverse battery protection1) ● Cla | INFINEON 英飞凌 | | ||
High-side switch PROFET Preliminary Data @ High-side switch @ Short-circuit protection ® Overtemperature protection ® Overload protection | @ Load dump protection up to 80 V @® Undervoltage and overvoltage shutdown with auto-restart and hysteresis @ Reverse battery protection @ Input protection @ Induct | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. Features • Load dump and reverse battery protection1) • Clamp of ne | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. Features • Load dump and reverse battery protection1) • Clamp of ne | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. Features • Load dump and reverse battery protection1) • Clamp of ne | INFINEON 英飞凌 | | ||
High-side switch PROFET Preliminary Data @ High-side switch @ Short-circuit protection ® Overtemperature protection ® Overload protection | @ Load dump protection up to 80 V @® Undervoltage and overvoltage shutdown with auto-restart and hysteresis @ Reverse battery protection @ Input protection @ Induct | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1 | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1 | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1 | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla | INFINEON 英飞凌 | | ||
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Shor | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Shor | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions Features • Overload protection • Current limitation • Shor | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions Features • Overload protection • Current limitation • Shor | INFINEON 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions Features • Overload protection • Current limitation • Shor | INFINEON 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：310.07 Kbytes Page：13 Pages | INFINEON 英飞凌 | | ||
封装/外壳：TO-220-5 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO220-5 集成电路（IC） 配电开关，负载驱动器 | INFINEON 英飞凌 | | ||
汽车级智能高边开关 | PROFET™ | INFINEON 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：310.07 Kbytes Page：13 Pages | INFINEON 英飞凌 | | ||
Classic PROFET™ 12V | Automotive smart high-side switch | INFINEON 英飞凌 | |
BTS4产品属性
- 类型
描述
- 型号
BTS4
- 功能描述
MOSFET Driver
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
11048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
INFINEO |
24+ |
TO263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Infineon(英飞凌) |
1422+ |
TO263-5 |
723 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFIENON |
24+ |
TO220-5 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
INF |
23+ |
NA |
18582 |
专做原装正品,假一罚百! |
|||
INFINEON/英飞凌 |
25+ |
TO263 |
32000 |
INFINEON/英飞凌全新特价BTS442E2E3062A即刻询购立享优惠#长期有货 |
|||
INFINEON |
21+ |
TO220AB |
2236 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
INFINEON |
24+ |
TO220AB |
8540 |
只做原装正品现货或订货假一赔十! |
|||
infineon |
2001 |
TO263 |
100 |
原装现货海量库存欢迎咨询 |
BTS4规格书下载地址
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BTS410E2E3062ABUMA1 Infineon (英飞凌) 开关控制器
2020-1-8BTS3410G
BTS3410G，全新原装当天发货或门市自取0755-82732291.
2019-10-9
DdatasheetPDF页码索引
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