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BTS4价格
参考价格：￥15.1305
型号：BTS410E2E3062ABUMA1 品牌：INF 备注：这里有BTS4多少钱，2025年最近7天走势，今日出价，今日竞价，BTS4批发/采购报价，BTS4行情走势销售排行榜，BTS4报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 |   | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions. Features •Overload protection •Current limitatio | SIEMENS 西门子 | | ||
High-side switch PROFET® * High-side switch * Short-circuit protection * Overtemperature protection * Overload protection * Load dump protection?) * Undervoltage and overvollafle sshutdown with auto-restart and hysteresis * Reverse battery protection * Input and status protection * Clamp of negative output | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
High-side switch High-side switch Short-circuit protection Overtemperature protection Overload protection Input protection Open-load detection in off-condition Undervoltage shutdown Negative transient voltage peak at inductive load limited to -10 V In case of a fault, the outputs trips and remains open | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | Infineon 英飞凌 | | ||
Smart High-Side Power Switch 1 Channel: 1 x 200m? General Description N channel vertical power MOSFET with charge pump ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Short-circuit protection • Current limitation • Overload protecti | Infineon 英飞凌 | | ||
Smart High-Side Power Switch 1 Channel: 1 x 200m? General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit protection • Current limitation • Overload protection • Overvol | Infineon 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart High-Side Power Switch One Channel: 60m??Status Feedback General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protective functions Applications • µC compatible high-side power switch with d | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla | Infineon 英飞凌 | | ||
High-side switch PROFET Preliminary Data @ High-side switch @ Short-circuit protection ® Overtemperature protection ® Overload protection | @ Load dump protection up to 80 V @® Undervoltage and overvoltage shutdown with auto-restart and hysteresis @ Reverse battery protection @ Input protection @ Induct | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Load dump and reverse battery protection1) ● Cla | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Load dump and reverse battery protection1) ● Cla | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Load dump and reverse battery protection1) ● Cla | Infineon 英飞凌 | | ||
High-side switch PROFET Preliminary Data @ High-side switch @ Short-circuit protection ® Overtemperature protection ® Overload protection | @ Load dump protection up to 80 V @® Undervoltage and overvoltage shutdown with auto-restart and hysteresis @ Reverse battery protection @ Input protection @ Induct | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. Features • Load dump and reverse battery protection1) • Clamp of ne | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. Features • Load dump and reverse battery protection1) • Clamp of ne | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. Features • Load dump and reverse battery protection1) • Clamp of ne | Infineon 英飞凌 | | ||
High-side switch PROFET Preliminary Data @ High-side switch @ Short-circuit protection ® Overtemperature protection ® Overload protection | @ Load dump protection up to 80 V @® Undervoltage and overvoltage shutdown with auto-restart and hysteresis @ Reverse battery protection @ Input protection @ Induct | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1 | Infineon 英飞凌 | | ||
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1 | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1 | Infineon 英飞凌 | | ||
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla | Infineon 英飞凌 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Shor | SIEMENS 西门子 | | ||
Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Shor | SIEMENS 西门子 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions Features • Overload protection • Current limitation • Shor | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions Features • Overload protection • Current limitation • Shor | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions Features • Overload protection • Current limitation • Shor | Infineon 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：310.07 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
封装/外壳：TO-220-5 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO220-5 集成电路（IC） 配电开关，负载驱动器 | Infineon 英飞凌 | | ||
汽车级智能高边开关 | PROFET™ | Infineon 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：310.07 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
Classic PROFET™ 12V | Automotive smart high-side switch | Infineon 英飞凌 | |
BTS4产品属性
- 类型
描述
- 型号
BTS4
- 功能描述
MOSFET Driver
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
23+ |
SOT263-5 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
23+ |
SOT-263 |
3000 |
原装正品假一罚百!可开增票! |
|||
Infineon |
23+ |
to263 |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFIENON |
TO263-5 |
4542 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon |
25+ |
TO-263-5 |
30000 |
代理全新原装现货,价格优势 |
|||
Infineon(英飞凌) |
24+ |
TO-263-4 |
5768 |
百分百原装正品,可原型号开票 |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
8177 |
原厂渠道供应,大量现货,原型号开票。 |
|||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
2015+ |
P-TO220- |
12500 |
全新原装,现货库存长期供应 |
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BTS4规格书下载地址
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2020-1-8BTS3410G
BTS3410G，全新原装当天发货或门市自取0755-82732291.
2019-10-9
DdatasheetPDF页码索引
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