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BTS410E2价格
参考价格：￥15.1305
型号：BTS410E2E3062ABUMA1 品牌：INF 备注：这里有BTS410E2多少钱，2025年最近7天走势，今日出价，今日竞价，BTS410E2批发/采购报价，BTS410E2行情走势销售排行榜，BTS410E2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BTS410E2 | Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 |   | |
BTS410E2 | Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | |
BTS410E2 | Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | |
BTS410E2 | Fast demagnetization of inductive loads 文件：418.63 Kbytes Page：15 Pages | Infineon 英飞凌 | | |
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
Smart Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 | | ||
汽车级智能高边开关 | PROFET™ | Infineon 英飞凌 | | ||
Fast demagnetization of inductive loads 文件：418.63 Kbytes Page：15 Pages | Infineon 英飞凌 | | ||
封装/外壳：TO-220-5 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO220-5 集成电路（IC） 配电开关，负载驱动器 | Infineon 英飞凌 | | ||
封装/外壳：TO-220-5 成形引线 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO220-5 集成电路（IC） 配电开关，负载驱动器 | Infineon 英飞凌 | | ||
Smart Highside Power Switch for Industrial Applications 文件：323.81 Kbytes Page：15 Pages | Infineon 英飞凌 | |
BTS410E2产品属性
- 类型
描述
- 型号
BTS410E2
- 功能描述
电源开关 IC - 配电 PROFET SMART HI SIDE PWR SW
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
14548 |
原厂渠道供应,大量现货,原型号开票。 |
|||
Infineon(英飞凌) |
24+ |
TO-263-5 |
7178 |
百分百原装正品,可原型号开票 |
|||
INFINEON |
2016+ |
TO263-5 |
1508 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INF |
23+ |
TO-220 |
12000 |
全新原装假一赔十 |
|||
INFINEO |
24+ |
TO263-5 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon |
25+ |
TO263-5 |
5000 |
原装正品,假一罚十! |
|||
INFINEON/英飞凌 |
22+ |
SOT-263-5 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFIENON |
24+ |
TO263-5 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
INFINEON |
1726+ |
TO-263 |
33 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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BTS410E2规格书下载地址
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DdatasheetPDF页码索引
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