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BTS412B2E3062A中文资料
BTS412B2E3062A数据手册规格书PDF详情
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• CMOS diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
BTS412B2E3062A产品属性
- 类型
描述
- 型号
BTS412B2E3062A
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
Smart Highside Power Switch
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
22+ |
TO-263 |
8000 |
终端可免费供样,支持BOM配单 |
|||
INFINEON |
2023+ |
TO263 |
5800 |
进口原装,现货热卖 |
|||
INFINEON |
23+ |
N/A |
7000 |
||||
Infineon/英飞凌 |
25+ |
TO-263-5 |
1090 |
原装正品,假一罚十! |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
3802 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON/英飞凌 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON/英飞凌 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
60000 |
||||
Infineon(英飞凌) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
INFINEON |
24+ |
8866 |
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INFINEON相关芯片制造商
Datasheet数据表PDF页码索引
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