SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

SIPMOS Small-Signal-Transistor

Feature • N-Channel • Enhancement mode • Logic level • dv/dtrated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

SIPMOS짰 Small-Signal-Transistor

Feature • N-Channel • Enhancement mode • Logic level • dv/dtrated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 50V ● ID 340mA ● RDS(ON)( at VGS=10V)

SOT-23 Plastic-Encapsulate MOSFETS

Features High density cell design for extremely low Rpson) Rugged and Relaible

N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

N-Channel MOSFET

Features ● VDS(V)=50V ● ID=300mA(VGS=10V) ● RDS(ON)

N-Channel MOSFET

Features VDS (V) = 50V ID = 200 mA (VGS = 10V) RDS(ON)

N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

N-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTMARKING DETAIL – SS

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

Small Signal MOSFET N-Channel

Features: * Low On-Resistance : 3.5Ω * Low Input Capacitance: 40PF * Low Out put Capacitance : 12PF * Low Threshole :1.5V * Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

SOT-23 Plastic-Encapsulate MOSFET

N -Channel MOSFET Features ● High density cell design for extremely low RDS(on) ● Rugged and Relaible Applications ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, ● Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State Relays

N-Channel MOSFET

■ Features ● VDS (V) = 50V ● ID = 200 mA (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode MOSFET

Features • 50 V/0.2 A, RDS(ON) = 3.5Ω @ VGS = 5 V. Id = 0.2 A RDS(ON) = 10Ω @ VGS = 2.75V. Id = 0.2 A • Super High dense cell design for extremely low RDS(ON) • Reliable and Rugged. • Low Threshold Voltage (0.5V - 1.5V) Make it Ideal for Low Voltage Applications. • SOT-23 for Surface

Plastic-Encapsulate Mosfets

N-Channel MOSFET FEATURES • High density cell design for extremely low RDS(ON) • Rugged and Reliable • Compact industry standard SOT-23 surface mount package

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

N-Channel Enhancement Mode MOSFET

Feature ● 50V/0.2A, RDS(ON) = 3.5Ω(MAX) @VGS = 5V. Id = 0.2A RDS(ON) = 10Ω(MAX) @VGS = 2.75V. Id = 0.2A ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● Low Threshold Voltage ( 0.5V—1.5V ) Make it Ideal for Low Voltage Applications. ● SOT-23 for Surf

N-Channel 50-V(D-S) MOSFET

N-Channel 50-V(D-S) MOSFET FEATURE ● Low On-Resistance ● Low Gate Threshold Voltage ● Fast Switching Speed ● Low Input / Output Leakage

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) ESD protected 2KV HBM zApplications Interfacing, switching (50V, 100mA)

Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

■ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. ■ FEATURES

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

50V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated System

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These prod

N-Channel Enhancement Mode Field Effect Transistor

Features • 50V, 0.22 A, RDS(ON) = 3.5Ω @ VGS = 10 V RDS(ON) = 6.0Ω @ VGS = 4.5 V • High density cell design for low RDS(ON). • Rugged and Reliable. • SOT-23 package

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The BSS138Q is suitable for automotive

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package. Applications Low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applicatio

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: SS • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

N-Channel MOS

GENERAL FEATURES ● VDS = 50V,ID = 0.22A ● RDS(ON)

N-Channel 50-V(D-S) MOSFET

N-Channel 50-V(D-S) MOSFET FEATURE ● High density cell design for extremely low RDS(on) ● Rugged and Relaible APPLICATION ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, ● Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State R

50V N-Channel MOSFET

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

Direct Logic-Level Interface: TTL/CMOS

FEATURE ● High density cell design for extremely low RDS(on) ● Rugged and Relaible APPLICATION ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State Relays

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These prod

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The BSS138Q is suitable for automotive

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175

60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench

60 V, 360 mA N-channel Trench MOSFET

60 V, 360 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ES

N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

N Channel MOSFET

Features •High density cell design for extremely low RDS(on) •Rugged and Reliable Application •Direct Logic-Level Interface: TTL/CMOS •Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,Transistors, etc. •Battery Operated Systems •Solid-State Relays

60 V, 320 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET techno

60 V, 320 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protection

60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD

nullN-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

Advanced MOSFETprocess technology

Features and Benefits:  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the lates

Plastic-Encapsulate MOSFETS

APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible -CAR for automotive and other

Advanced MOSFETprocess technology

Features and Benefits:  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the lates

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Available in Lead Free/RoHS Compliant Version (Note 4) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 5 and 6)

Dual N-Channel 60 V (D-S) MOSFET

•Low On-Resistance:1.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Dual N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition •Low On-Resistance:2.5 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC