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位置：首页 > IC中文资料第3422页 > BSS13

BSS13晶体管资料

  • BSS13别名：BSS13三极管、BSS13晶体管、BSS13晶体三极管

  • BSS13生产厂家：德国电子元件股份公司

  • BSS13制作材料：Si-NPN

  • BSS13性质：开关管 （S）_TR

  • BSS13封装形式：直插封装

  • BSS13极限工作电压：60V

  • BSS13最大电流允许值：1A

  • BSS13最大工作频率：<1MHZ或未知

  • BSS13引脚数：3

  • BSS13最大耗散功率：1W

  • BSS13放大倍数：

  • BSS13图片代号：C-40

  • BSS13vtest：60

  • BSS13htest：999900

  • BSS13atest：1

  • BSS13wtest：1

  • BSS13代换 BSS13用什么型号代替：BSS14,BSS27,BSV77,BSV95,BSX30,2N5189,2SC1386,3DK29B,

BSS13价格

参考价格：￥0.5225

型号：BSS131H6327 品牌：Infineon 备注：这里有BSS13多少钱，2024年最近7天走势，今日出价，今日竞价，BSS13批发/采购报价，BSS13行情走势销售排行榜，BSS13报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BSS131

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

SIEMENS

Siemens Ltd

SIEMENS
BSS131

SIPMOS Small-Signal-Transistor

Feature •N-Channel •Enhancementmode •Logiclevel •dv/dtrated •Pb-freelead-plating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSS131H6327

SIPMOS짰 Small-Signal-Transistor

Feature •N-Channel •Enhancementmode •Logiclevel •dv/dtrated •Pb-freelead-plating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSS138

SOT-23 Plastic-Encapsulate MOSFETS

Features HighdensitycelldesignforextremelylowRpson) RuggedandRelaible

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BSS138

N-Channel Enhancement Mode MOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
BSS138

N-Channel MOSFET

Features ●VDS(V)=50V ●ID=300mA(VGS=10V) ●RDS(ON)

UMWUMW

友台友台半导体

UMW
BSS138

N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS50V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
BSS138

SOT-23 Plastic-Encapsulate MOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible Applications ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display, ●Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateRelays

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
BSS138

N-Channel MOSFET

■Features ●VDS(V)=50V ●ID=200mA(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BSS138

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET PARTMARKINGDETAIL–SS

Zetex

Zetex Semiconductors

Zetex
BSS138

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

SIEMENS

Siemens Ltd

SIEMENS
BSS138

Small Signal MOSFET N-Channel

Features: *LowOn-Resistance:3.5Ω *LowInputCapacitance:40PF *LowOutputCapacitance:12PF *LowThreshole:1.5V *FastSwitchingSpeed:20ns Application: *DCtoDCConverter *Cellular&PCMCIACard *CordlessTelephone *PowerManagementinPortableandBatteryetc.

WEITRONWEITRON

威堂電子科技

WEITRON
BSS138

N-Channel Enhancement Mode MOSFET

Features •50V/0.2A, RDS(ON)=3.5Ω@VGS=5V.Id=0.2A RDS(ON)=10Ω@VGS=2.75V.Id=0.2A •SuperHighdensecelldesignforextremelylowRDS(ON) •ReliableandRugged. •LowThresholdVoltage(0.5V-1.5V)MakeitIdealforLowVoltageApplications. •SOT-23forSurface

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
BSS138

Plastic-Encapsulate Mosfets

N-ChannelMOSFET FEATURES •HighdensitycelldesignforextremelylowRDS(ON) •RuggedandReliable •CompactindustrystandardSOT-23surfacemountpackage

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
BSS138

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138

N-Channel Enhancement Mode MOSFET

Feature ●50V/0.2A, RDS(ON)=3.5Ω(MAX)@VGS=5V.Id=0.2A RDS(ON)=10Ω(MAX)@VGS=2.75V.Id=0.2A ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●LowThresholdVoltage(0.5V—1.5V)MakeitIdealforLowVoltageApplications. ●SOT-23forSurf

ZPSEMI

ZP Semiconductor

ZPSEMI
BSS138

N-Channel 50-V(D-S) MOSFET

N-Channel50-V(D-S)MOSFET FEATURE ●LowOn-Resistance ●LowGateThresholdVoltage ●FastSwitchingSpeed ●LowInput/OutputLeakage

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI
BSS138

N-Channel 30-V(D-S) MOSFET

zFeatures 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Drivecircuitscanbesimple. 4)Paralleluseiseasy. 5)ESDprotected2KVHBM zApplications Interfacing,switching(50V,100mA)

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

TUOFENG
BSS138

Direct Logic-Level Interface: TTL/CMOS

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

SILIKRONSilikron Semiconductor Co.,LTD.

Silikron Semiconductor Co.,LTD.

SILIKRON
BSS138

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

■DESCRIPTION ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowon-resistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. ■FEATURES

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BSS138

NCE N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
BSS138

50V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •RDS(ON),VGS@2.5V,IDS@100mA=6Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystem

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BSS138

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseprod

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BSS138

N-Channel Enhancement Mode Field Effect Transistor

Features •50V,0.22A, RDS(ON)=3.5Ω@VGS=10V RDS(ON)=6.0Ω@VGS=4.5V •HighdensitycelldesignforlowRDS(ON). •RuggedandReliable. •SOT-23package

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
BSS138

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •TheBSS138Qissuitableforautomotive

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features LowRDS(on),ruggedandreliable,compactindustrystandardSOT-23surfacemountpackage. Applications Lowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplicatio

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
BSS138

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
BSS138

N-Channel Enhancement Mode Field Effect Transistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:SS •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BSS138

N-Channel MOS

GENERALFEATURES ●VDS=50V,ID=0.22A ●RDS(ON)

E-CMOS

飞虹积体

E-CMOS
BSS138

N-Channel 50-V(D-S) MOSFET

N-Channel50-V(D-S)MOSFET FEATURE ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible APPLICATION ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display, ●Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateR

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BSS138

50V N-Channel MOSFET

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

Good-Ark

Good-Ark

Good-Ark
BSS138

Direct Logic-Level Interface: TTL/CMOS

FEATURE ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible APPLICATION ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display,Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateRelays

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

BWTECH
BSS138_08

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138_17

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138_NL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseprod

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BSS138-13-F

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •TheBSS138Qissuitableforautomotive

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138-7-F

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138BK

60 V, 360 mA N-channel Trench MOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. Featuresandbenefits -Logic-levelcompatible -Veryfastswitching -TrenchMOSFETtechn

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BSS138BK

60 V, 360 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ES

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSS138BK

N-Channel Enhancement Mode MOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
BSS138BKS

60 V, 320 mA dual N-channel Trench MOSFET

1.1Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363 (SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSS138BKW

60 V, 320 mA N-channel Trench MOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■ESDprotection

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSS138BKW

60 V, 320 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSS138BKW

nullN-Channel Enhancement Mode MOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
BSS138-CAR

Plastic-Encapsulate MOSFETS

APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible -CARforautomotiveandother

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
BSS138DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●Fast

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •AvailableinLeadFree/RoHSCompliantVersion(Note4) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes5and6)

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DW

Dual N-Channel 60 V (D-S) MOSFET

•LowOn-Resistance:1.5 FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BSS138DW

Dual N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowOn-Resistance:2.5Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BSS138DW

Dual N-Channel MOSFET

Feature HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible Application DirectLogic-LevelInterface:TTL/CMOS BatteryOperatedSystems Solid-StateRelays

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
BSS138DW_09

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •AvailableinLeadFree/RoHSCompliantVersion(Note4) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes5and6)

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DW_V01

Dual N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowOn-Resistance:2.5Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BSS138DW-7-F

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •AvailableinLeadFree/RoHSCompliantVersion(Note4) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes5and6)

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DWK

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DWK-13

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DWK-7

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DWQ

Low On-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchin

DIODESDiodes Incorporated

达尔科技

DIODES

BSS13产品属性

  • 类型

    描述

  • 型号

    BSS13

  • 制造商

    Infineon Technologies AG

  • 功能描述

    MOSFET N SOT-23

  • 制造商

    Infineon Technologies AG

  • 功能描述

    MOSFET, N, SOT-23

  • 制造商

    Infineon Technologies AG

  • 功能描述

    N CH MOSFET, 240V, 100mA, SOT-23; Transistor

  • Polarity

    N Channel; Continuous Drain Current

  • Id

    100mA; Drain Source Voltage

  • Vds

    240V; On Resistance

  • Rds(on)

    14ohm; Rds(on) Test Voltage

  • Vgs

    10V; Threshold Voltage Vgs

  • Typ

    1.4V ;RoHS

  • Compliant

    Yes

  • 制造商

    Infineon Technologies AG

  • 功能描述

    N-channel MOSFET,BSS131 0.1A 240V

BSS13供应商更多...

更新时间：2024-4-24 18:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
BSS131H6327XTSA1
Infineon Technologies
23+
PG-SOT23
30000
晶体管-分立半导体产品-原装正品
询价
深圳市天芯威科技有限公司
BSS131H6327XTSA1
Infineon(英飞凌)
23+
SOT23
25900
新到现货,只有原装
询价
深圳市高捷芯城科技有限公司
BSS131
Infineon(英飞凌)
23+
SOT-23
75429
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市英博尔电子有限公司
BSS131H6327
INFINEON
2年内
SOT-23
16500
英博尔原装优质现货订货渠道商
询价
深圳深宇韬电子科技有限公司
BSS131H6327
HOLTEK
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价
深圳市中飞芯源科技有限公司
BSS131H6327XTSA1
INFINEON/英飞凌
23+
SOT-23
88000
原装，可配单
询价
深圳市科恒伟业电子有限公司
BSS131(SR)
INFINEON/英飞凌
22+
SOT-23
9800
只做原装正品假一赔十!正规渠道订货!
询价
深圳市金启宁科技有限公司
BSS131H6327XTSA1
INFINEON/英飞凌
21+
SOT23
50000
只做原装
询价
深圳市拓亿芯电子有限公司
BSS131H6327
INFINEON/英飞凌
23+
SOT23
15000
原装现货假一赔十
询价
深圳市芯祺盛科技有限公司
BSS131H6327
INFINEON
19+
SOT-23
66175
原装库存有订单来谈优势
询价

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