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位置：首页 > IC中文资料 > BSS13

BSS13晶体管资料

  • BSS13别名：BSS13三极管、BSS13晶体管、BSS13晶体三极管

  • BSS13生产厂家：德国电子元件股份公司

  • BSS13制作材料：Si-NPN

  • BSS13性质：开关管 （S）_TR

  • BSS13封装形式：直插封装

  • BSS13极限工作电压：60V

  • BSS13最大电流允许值：1A

  • BSS13最大工作频率：<1MHZ或未知

  • BSS13引脚数：3

  • BSS13最大耗散功率：1W

  • BSS13放大倍数：

  • BSS13图片代号：C-40

  • BSS13vtest：60

  • BSS13htest：999900

  • BSS13atest：1

  • BSS13wtest：1

  • BSS13代换 BSS13用什么型号代替：BSS14,BSS27,BSV77,BSV95,BSX30,2N5189,2SC1386,3DK29B,

BSS13价格

参考价格：￥0.5225

型号：BSS131H6327 品牌：Infineon 备注：这里有BSS13多少钱，2026年最近7天走势，今日出价，今日竞价，BSS13批发/采购报价，BSS13行情走势销售排行榜，BSS13报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BSS131

SIPMOS Small-Signal-Transistor

Feature • N-Channel • Enhancement mode • Logic level • dv/dtrated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

BSS131

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

SIEMENS

西门子

BSS131H6327

SIPMOS짰 Small-Signal-Transistor

Feature • N-Channel • Enhancement mode • Logic level • dv/dtrated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

BSS131I

采用 SOT23 封装且击穿电压为 240 V 的工业级 N 沟道小信号 MOSFET

英飞凌的小信号和小功率 MOSFET 具有最佳的性价比和小尺寸封装，最适合广泛的应用和电路。这些包括低压驱动器、线性电池充电器、电池保护、负载开关、DC-DC转换器、反极性保护等。 • 100% 雪崩测试\n• 逻辑级别\n• 无铅电镀；符合 RoHS 规定\n• 符合工业应用要求;

INFINEON

英飞凌

BSS138

丝印代码：J2x；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

TECHPUBLIC

台舟电子

BSS138

丝印代码：SS；N-Channel MOSFET

Features ● VDS(V)=50V ● ID=300mA(VGS=10V) ● RDS(ON)

UMW

友台半导体

BSS138

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) ESD protected 2KV HBM zApplications Interfacing, switching (50V, 100mA)

TUOFENG

拓锋半导体

BSS138

N-Channel MOSFET

Features VDS (V) = 50V ID = 200 mA (VGS = 10V) RDS(ON)

EVVOSEMI

翊欧

BSS138

Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

SILIKRON

新硅能微电子

BSS138

丝印代码：SS；N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

SY

顺烨电子

BSS138

丝印代码：SS；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 50V ● ID 340mA ● RDS(ON)( at VGS=10V)

YANGJIE

扬杰电子

BSS138

丝印代码：SS；SOT-23 Plastic-Encapsulate MOSFETS

Features High density cell design for extremely low Rpson) Rugged and Relaible

DGNJDZ

南晶电子

BSS138

N-Channel Enhancement Mode MOSFET

Feature ● 50V/0.2A, RDS(ON) = 3.5Ω(MAX) @VGS = 5V. Id = 0.2A RDS(ON) = 10Ω(MAX) @VGS = 2.75V. Id = 0.2A ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● Low Threshold Voltage ( 0.5V—1.5V ) Make it Ideal for Low Voltage Applications. ● SOT-23 for Surf

ZPSEMIZP Semiconductor

至尚臻品

BSS138

N-Channel 50-V(D-S) MOSFET

N-Channel 50-V(D-S) MOSFET FEATURE ● Low On-Resistance ● Low Gate Threshold Voltage ● Fast Switching Speed ● Low Input / Output Leakage

HMSEMI

华之美半导体

BSS138

N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

SHUNYE

顺烨电子

BSS138

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package. Applications Low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applicatio

FOSHAN

蓝箭电子

BSS138

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

VBSEMI

微碧半导体

BSS138

N-Channel Enhancement Mode MOSFET

Features • 50 V/0.2 A, RDS(ON) = 3.5Ω @ VGS = 5 V. Id = 0.2 A RDS(ON) = 10Ω @ VGS = 2.75V. Id = 0.2 A • Super High dense cell design for extremely low RDS(ON) • Reliable and Rugged. • Low Threshold Voltage (0.5V - 1.5V) Make it Ideal for Low Voltage Applications. • SOT-23 for Surface

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

BSS138

Plastic-Encapsulate Mosfets

N-Channel MOSFET FEATURES • High density cell design for extremely low RDS(ON) • Rugged and Reliable • Compact industry standard SOT-23 surface mount package

HOTTECH

合科泰

BSS138

SOT-23 Plastic-Encapsulate MOSFET

N -Channel MOSFET Features ● High density cell design for extremely low RDS(on) ● Rugged and Relaible Applications ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, ● Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State Relays

HDSEMI

海德半导体

BSS138

Direct Logic-Level Interface: TTL/CMOS

FEATURE ● High density cell design for extremely low RDS(on) ● Rugged and Relaible APPLICATION ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State Relays

BWTECH

BSS138

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

■ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. ■ FEATURES

UTC

友顺

BSS138

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTMARKING DETAIL – SS

ZETEX

BSS138

丝印代码：SS；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These prod

FAIRCHILD

仙童半导体

BSS138

N-Channel Enhancement Mode Field Effect Transistor

Features • 50V, 0.22 A, RDS(ON) = 3.5Ω @ VGS = 10 V RDS(ON) = 6.0Ω @ VGS = 4.5 V • High density cell design for low RDS(ON). • Rugged and Reliable. • SOT-23 package

CET

华瑞

BSS138

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

NCEPOWER

新洁能

BSS138

丝印代码：SS；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The BSS138Q is suitable for automotive

DIODES

美台半导体

BSS138

丝印代码：SS；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

DIODES

美台半导体

BSS138

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

BSS138

N-Channel MOS

GENERAL FEATURES ● VDS = 50V,ID = 0.22A ● RDS(ON)

E-CMOS

飞虹高科

BSS138

50V N-Channel MOSFET

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

GOOD-ARK

固锝电子

BSS138

N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: SS • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

MCC

BSS138

N-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

TSC

台湾半导体

BSS138

Small Signal MOSFET N-Channel

Features: * Low On-Resistance : 3.5Ω * Low Input Capacitance: 40PF * Low Out put Capacitance : 12PF * Low Threshole :1.5V * Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

WEITRON

BSS138

N-Channel 50-V(D-S) MOSFET

N-Channel 50-V(D-S) MOSFET FEATURE ● High density cell design for extremely low RDS(on) ● Rugged and Relaible APPLICATION ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, ● Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State R

JIANGSU

长电科技

BSS138

N-Channel MOSFET

■ Features ● VDS (V) = 50V ● ID = 200 mA (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

BSS138

50V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated System

PANJIT

強茂

BSS138

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

SIEMENS

西门子

BSS138_08

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

DIODES

美台半导体

BSS138_17

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

BSS138_NL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These prod

FAIRCHILD

仙童半导体

BSS138-13-F

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

BSS138-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The BSS138Q is suitable for automotive

DIODES

美台半导体

BSS138-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

DIODES

美台半导体

BSS138-7-F

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

BSS138-7-F

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: • Low On-Resisrance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage Applications: • N-channel Enhancement Mode Effect Transistor • Switching Application Description N-Channel Logic Level Enhancement Mode Field Effect

MULTICOMP

易络盟

BSS138-A

N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible AEC-Q101qualified APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

HUIXIN

慧芯电子

BSS138ADW

N-Channel MOSFET

FEATURES  Epoxy meets UL 94 V-0 flammability rating  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  ESD Protected 2KV HBM APPLICATIONS  Direct Logic-Level Interface: TTL/CMOS  Load Switch for Portable Devices  DC/DC Converter

HUIXIN

慧芯电子

BSS138AKDW

N-Channel MOSFET

Application « Reverse Battery protection i © Load switch « Power management « Motor Control

TECHPUBLIC

台舟电子

BSS138AKQB-Q

丝印代码：QL；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175

NEXPERIA

安世

BSS138AKRA-Q

丝印代码：D4；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench

NEXPERIA

安世

BSS138BK

丝印代码：J2x；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

TECHPUBLIC

台舟电子

BSS138BK

丝印代码：SB；60 V, 360 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ES

NEXPERIA

安世

BSS138BK

60 V, 360 mA N-channel Trench MOSFET

ETC

知名厂家

BSS138BK

N Channel MOSFET

Features •High density cell design for extremely low RDS(on) •Rugged and Reliable Application •Direct Logic-Level Interface: TTL/CMOS •Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,Transistors, etc. •Battery Operated Systems •Solid-State Relays

MULTICOMP

易络盟

BSS138BKS

丝印代码：LG；60 V, 320 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET techno

NEXPERIA

安世

BSS138BKS

N-Channel MOSFET

Application « Reverse Battery protection » Load switch « Power management » Motor Control

TECHPUBLIC

台舟电子

BSS138BKW

丝印代码：SS；nullN-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

TECHPUBLIC

台舟电子

BSS138BKW

丝印代码：AD；60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD

NEXPERIA

安世

BSS138BKW

60 V, 320 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protection

PHILIPS

飞利浦

BSS13产品属性

  • 类型

    描述

  • OPN：

    BSS131H6327XTSA1

  • Qualification：

    Automotive

  • Package name：

    PG-SOT23-3

  • VDS max：

    240 V

  • RDS (on) @10V max：

    14000 mΩ

  • QG typ @10V：

    2.1 nC

  • Special Features：

    Small Signal

  • VGS(th) min：

    0.8 V

  • VGS(th) max：

    1.8 V

  • Technology：

    SIPMOS™

BSS13供应商更多...

更新时间：2026-5-14 11:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科芯源微电子有限公司
BSS138
PANJIT/强茂
26+
SOT-23
60000
原厂原装现货 价超好实单必成
询价
中天科工半导体（深圳）有限公司
BSS138W-7-F
DIODES/美台
25+
SOD-323
37762
DIODES/美台全新特价BSS138W-7-F即刻询购立享优惠#长期有货
询价
深圳市纳立科技有限公司
BSS138LT3G
ON-SEMI
22+
N/A
20000
原装正品 香港现货
询价
深圳市赛特兴科技有限公司
BSS138NH6327
INFINEON
23+
SOT23
9953
正规渠道,只有原装!
询价
深圳市宇创芯科技有限公司
BSS138LT3G
ON(安森美)
24+
SOT-23(SOT-23-3)
16860
原装正品现货支持实单
询价
深圳市得捷芯城科技有限公司
BSS138PS
恩XP
25+
7589
全新原装现货,支持排单订货,可含税开票
询价
深圳市亿联芯电子科技有限公司
BSS138-7-F
DIODES/美台
2021+
SOT-23
9865
100%原厂代理库存,正品全新现货
询价
深圳市高捷芯城科技有限公司
BSS138LT1
ON(安森美)
24+
标准封装
22048
全新原装正品/价格优惠/质量保障
询价
深圳市金华微盛电子有限公司
BSS138W-7
DIODES
19+
SOT323
30000
询价
深圳市中飞凌科技有限公司
BSS138LT1G
ON
26+
SOT-23
60000
只有原装,一站式BOM配单
询价

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