60 V, 360 mA N-channel Trench MOSFET

丝印代码：SB；60 V, 360 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ES

丝印代码：J2x；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

N Channel MOSFET

Features •High density cell design for extremely low RDS(on) •Rugged and Reliable Application •Direct Logic-Level Interface: TTL/CMOS •Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,Transistors, etc. •Battery Operated Systems •Solid-State Relays

Nch 60V 400mA 小信号MOSFET

BSS138BK在SOT-23封装中内置单Nch 60V 400mA MOSFET和ESD保护二极管。适合开关电路、低边负载开关、继电器驱动器用途。 • Very fast switching\n• Ultra low voltage drive (2.5V drive)\n• ESD protection up to 2kV (HBM)\n• Pb-free lead plating; RoHS compliant.\n• Halogen Free.;

60 V, 360 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• ESD protection up to 1.5 kV\n• AEC-Q101 qualified;

60 V, 360 mA N-channel Trench MOSFET

丝印代码：LG；60 V, 320 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET techno

N-Channel MOSFET

Application « Reverse Battery protection » Load switch « Power management » Motor Control

丝印代码：AD；60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD

丝印代码：SS；nullN-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

60 V, 320 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protection

60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD

60 V, 360 mA N-channel Trench MOSFET

文件：865.01 Kbytes Page：16 Pages

60 V, 360 mA N-channel Trench MOSFET

丝印代码：VEA；Nch 60V 400mA Small Signal MOSFET

文件：5.29776 Mbytes Page：14 Pages

Small Signal MOSFETS

60 V, 320 mA dual N-channel Trench MOSFET

文件：861.19 Kbytes Page：18 Pages

60 V, 320 mA dual N-channel Trench MOSFET

文件：888.36 Kbytes Page：17 Pages

60 V, 320 mA dual N-channel Trench MOSFET

文件：861.19 Kbytes Page：18 Pages

丝印代码：VE；Nch 60V 380mA Small Signal MOSFET

文件：5.39414 Mbytes Page：14 Pages

60 V, 320 mA N-channel Trench MOSFET

文件：864.87 Kbytes Page：16 Pages

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava