采用 SOT23 封装且击穿电压为 240 V 的工业级 N 沟道小信号 MOSFET

英飞凌的小信号和小功率 MOSFET 具有最佳的性价比和小尺寸封装，最适合广泛的应用和电路。这些包括低压驱动器、线性电池充电器、电池保护、负载开关、DC-DC转换器、反极性保护等。 • 100% 雪崩测试\n• 逻辑级别\n• 无铅电镀；符合 RoHS 规定\n• 符合工业应用要求;

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us