60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175

1 5/16 (33.3 mm) Industrial Single Turn, Bushing Mount, Conductive Plastic Potentiometer

FEATURES • Center tap available • Continuous rotation and mechanical stops both standard • Suitable model for all types of industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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