N-channel enhancement mode vertical D-MOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. The BSS123 is supplied in the SOT23 subminiature surface mounting package. FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiatur

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

SIPMOS Small-Signal-Transistor

SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

Power MOSFET N-Channel

Features: * Low On-Resistance : 6.0Ω * Low Input Capacitance: 20PF * Low Out put Capacitance : 9PF * Low Threshole :2.8V * Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

N-Channel Enhancement Mode Field Effect Transistor

Features • High Dense Cell Design for Extremely Low RDS(ON) • Voltage Controlled Small Signal Switch • Surface Mount Package • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Complian

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features High density cell design for extremely low RDS(ON). Applications This device is suitable for use as a load switch or in PWM applications.

N-CHANNEL ENHANCEMENT MODE MOSFET

Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low curr

N Channel MOSFET

N Channel MOSFET FEATURE ● Surface Mount Package ● High Density Cell Design for Extremely Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable APPLICATION ● Small Servo Motor Controls ● Power MOSFET Gate Drivers ● Switching Application

N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

N-Channel Enhancement Mode Field Effect Tramsistor

Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating

N-Channel MOSFET

Features ● VDS (V) = 100V ● ID = 0.17 A (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode Power MOSFET

FEATURE ● Pb-Free Package is available.

100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

N-channel TrenchMOS transistor Logic level FET

FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Relay driver • High-spe

N-Channel Enhancement Mode MOSFET

Features Low on-resistance High-speed switching Drive circuits can be simple Parallel use is easy

N-Channel 100-V(D-S) MOSFET

FEATURE: ● Rugged and Relaible ● High density cell design for extremely low RDS(on) ● Surface Mount Package ● Voltage Controlled Small Signal Switch VDS(V)=100V ID = 0.17A (VGS =10V) RDS(ON)

N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

N-CHANNEL POWER MOSFET

FEATURE ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

N-Channel Enhancement Mode MOSFET

Features • ESD protected gate • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

N-Channel Enhancement Mode MOSFET

Features • ESD protected gate • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

NCE N-Channel Enhancement Mode Power MOSFET

General Features ● VDS = 100 V,ID = 0.17A RDS(ON)

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

N-Channel Enhancement Mode MOSFET

Features • High ESD • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

MOSFET N-CHANNEL POWER MOSFET

DESCRIPTION The BSS123L is available in SOT 23 p ackage FEATURES  Available in SOT 23 p ackage

TMOS FET Transistor(N-Channel)

TMOS FET Transistor N–Channel

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

OptiMOS??Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant, Halogen free

N-CHANNEL MOSFET

Description The BSS123N3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High speed switching • Low-voltage drive(2.5V) • Easily designed drive circuits • Pb-free lead plating and halogen-free package

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat

MOSFET

Features • ESD protected gate • High speed switching • Pb-free lead plating and halogen-free package • Easily designed drive circuits • Low-voltage drive • Easy to use in parallel

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device, Note 3 and 4

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-c

SOT-323 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

N-Channel MOSFET

FEATURE  Surface Mount Package  High Density Cell Design for Extremely Low RDS(ON)  Voltage Controlled Small Signal Switch  Rugged and Reliable APPLICATION  Small Servo Motor Controls  Power MOSFET Gate Drivers  Switching Application

N-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device, Note 3 and 4

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device, Note 3 and 4

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Spe

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Spe