BSS123价格

参考价格:¥0.1211

型号:BSS123 品牌:Fairchild 备注:这里有BSS123多少钱,2025年最近7天走势,今日出价,今日竞价,BSS123批发/采购报价,BSS123行情走势销售排行榜,BSS123报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BSS123

N-channel enhancement mode vertical D-MOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. The BSS123 is supplied in the SOT23 subminiature surface mounting package. FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiatur

Philips

飞利浦

BSS123

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Zetex

BSS123

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

SIEMENS

西门子

BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BSS123

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

DIODES

美台半导体

BSS123

SIPMOS Small-Signal-Transistor

SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

Infineon

英飞凌

BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BSS123

Power MOSFET N-Channel

Features: * Low On-Resistance : 6.0Ω * Low Input Capacitance: 20PF * Low Out put Capacitance : 9PF * Low Threshole :2.8V * Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

WEITRON

BSS123

N-Channel Enhancement Mode Field Effect Transistor

Features • High Dense Cell Design for Extremely Low RDS(ON) • Voltage Controlled Small Signal Switch • Surface Mount Package • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Complian

MCC

美微科

BSS123

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features High density cell design for extremely low RDS(ON). Applications This device is suitable for use as a load switch or in PWM applications.

FOSHAN

蓝箭电子

BSS123

N-CHANNEL ENHANCEMENT MODE MOSFET

Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low curr

BWTECH

BSS123

N Channel MOSFET

N Channel MOSFET FEATURE ● Surface Mount Package ● High Density Cell Design for Extremely Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable APPLICATION ● Small Servo Motor Controls ● Power MOSFET Gate Drivers ● Switching Application

JIANGSU

长电科技

BSS123

N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

YANGJIE

扬州扬杰电子

BSS123

N-CHANNEL POWER MOSFET

FEATURE ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

HMSEMI

华之美半导体

BSS123

N-Channel Enhancement Mode Field Effect Tramsistor

Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

BSS123

N-Channel MOSFET

Features ● VDS (V) = 100V ● ID = 0.17 A (VGS = 10V) ● RDS(ON)

YFWDIODE

佑风微电子

BSS123

N-Channel Enhancement Mode Power MOSFET

FEATURE ● Pb-Free Package is available.

LEIDITECH

雷卯电子

BSS123

100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

PANJIT

強茂

BSS123

N-channel TrenchMOS transistor Logic level FET

FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Relay driver • High-spe

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BSS123

N-Channel Enhancement Mode MOSFET

Features Low on-resistance High-speed switching Drive circuits can be simple Parallel use is easy

TECHPUBLIC

台舟电子

BSS123

N-Channel 100-V(D-S) MOSFET

FEATURE: ● Rugged and Relaible ● High density cell design for extremely low RDS(on) ● Surface Mount Package ● Voltage Controlled Small Signal Switch VDS(V)=100V ID = 0.17A (VGS =10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

BSS123

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

DGNJDZ

南晶电子

BSS123

N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

SY

顺烨电子

BSS123

包装:管件 描述:N-CHANNEL ENHANCEMENT MODE MOSFE 分立半导体产品 晶体管 - FET,MOSFET - 单个

ANBONSEMI

安邦

BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件:202.46 Kbytes Page:7 Pages

ONSEMI

安森美半导体

BSS123

N-Channel Enhancement Mode MOSFET

文件:1.07264 Mbytes Page:9 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

BSS123

N-channel TrenchMOS transistor

文件:29.38 Kbytes Page:4 Pages

Philips

飞利浦

BSS123

SIPMOS??Small-Signal-Transistor Feature

文件:3.46577 Mbytes Page:8 Pages

Infineon

英飞凌

BSS123

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:367.31 Kbytes Page:4 Pages

DIODES

美台半导体

BSS123

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:128.61 Kbytes Page:3 Pages

DIODES

美台半导体

BSS123

SIPMOS Small-Signal-Transistor

文件:128.509 Kbytes Page:8 Pages

Infineon

英飞凌

100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

PANJIT

強茂

100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

PANJIT

強茂

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp

DIODES

美台半导体

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

Features • ESD protected gate • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

CYSTEKEC

全宇昕科技

N-Channel Enhancement Mode MOSFET

Features • ESD protected gate • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

CYSTEKEC

全宇昕科技

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

DIODES

美台半导体

NCE N-Channel Enhancement Mode Power MOSFET

General Features ● VDS = 100 V,ID = 0.17A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

DIODES

美台半导体

N-Channel Enhancement Mode MOSFET

Features • High ESD • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel

CYSTEKEC

全宇昕科技

MOSFET N-CHANNEL POWER MOSFET

DESCRIPTION The BSS123L is available in SOT 23 p ackage FEATURES  Available in SOT 23 p ackage

AITSEMI

创瑞科技

TMOS FET Transistor(N-Channel)

TMOS FET Transistor N–Channel

Motorola

摩托罗拉

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

OptiMOS??Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant, Halogen free

Infineon

英飞凌

N-CHANNEL MOSFET

Description The BSS123N3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High speed switching • Low-voltage drive(2.5V) • Easily designed drive circuits • Pb-free lead plating and halogen-free package

CYSTEKEC

全宇昕科技

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat

DIODES

美台半导体

MOSFET

Features • ESD protected gate • High speed switching • Pb-free lead plating and halogen-free package • Easily designed drive circuits • Low-voltage drive • Easy to use in parallel

COMCHIP

典琦

N-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

TSC

台湾半导体

N-Channel MOSFET

FEATURE  Surface Mount Package  High Density Cell Design for Extremely Low RDS(ON)  Voltage Controlled Small Signal Switch  Rugged and Reliable APPLICATION  Small Servo Motor Controls  Power MOSFET Gate Drivers  Switching Application

GWSEMI

唯圣电子

BSS123产品属性

  • 类型

    描述

  • 型号

    BSS123

  • 功能描述

    MOSFET SOT-23 N-CH LOGIC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-9 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
2016+
SOT23
3000
只做原装,假一罚十,公司可开17%增值税发票!
TI
23+
SOP
12000
全新原装假一赔十
FAIRCHILD/仙童
25+
SOT-23
154502
明嘉莱只做原装正品现货
DIODES/美台
25+
SOT-23
37758
DIODES/美台全新特价BSS123-7-F即刻询购立享优惠#长期有货
INFINEON
04+
SOT23/
2110
全新原装进口自己库存优势
INFIEON
24+
SOT-23
2987
绝对全新原装现货供应!
OTHER/其它
23+
NA
7825
原装正品!清仓处理!
23+
NA
12328
原装正品价格优惠,长期优势供应
恩XP
24+
SOT23
8950
BOM配单专家,发货快,价格低
恩XP
24+
SOT-23
10000
只做原装欢迎含税交易,假一赔十,放心购买

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