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BSS123价格
参考价格:¥0.1211
型号:BSS123 品牌:Fairchild 备注:这里有BSS123多少钱,2025年最近7天走势,今日出价,今日竞价,BSS123批发/采购报价,BSS123行情走势销售排行榜,BSS123报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BSS123 | N-channel enhancement mode vertical D-MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. The BSS123 is supplied in the SOT23 subminiature surface mounting package. FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiatur | Philips 飞利浦 | ||
BSS123 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex | ||
BSS123 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V | SIEMENS 西门子 | ||
BSS123 | N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BSS123 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform | DIODES 美台半导体 | ||
BSS123 | SIPMOS Small-Signal-Transistor SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 | Infineon 英飞凌 | ||
BSS123 | N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BSS123 | Power MOSFET N-Channel Features: * Low On-Resistance : 6.0Ω * Low Input Capacitance: 20PF * Low Out put Capacitance : 9PF * Low Threshole :2.8V * Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. | WEITRON | ||
BSS123 | N-Channel Enhancement Mode Field Effect Transistor Features • High Dense Cell Design for Extremely Low RDS(ON) • Voltage Controlled Small Signal Switch • Surface Mount Package • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Complian | MCC 美微科 | ||
BSS123 | N-CHANNEL MOSFET in a SOT-23 Plastic Package Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features High density cell design for extremely low RDS(ON). Applications This device is suitable for use as a load switch or in PWM applications. | FOSHAN 蓝箭电子 | ||
BSS123 | N-CHANNEL ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low curr | BWTECH | ||
BSS123 | N Channel MOSFET N Channel MOSFET FEATURE ● Surface Mount Package ● High Density Cell Design for Extremely Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable APPLICATION ● Small Servo Motor Controls ● Power MOSFET Gate Drivers ● Switching Application | JIANGSU 长电科技 | ||
BSS123 | N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V) | YANGJIE 扬州扬杰电子 | ||
BSS123 | N-CHANNEL POWER MOSFET FEATURE ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. | HMSEMI 华之美半导体 | ||
BSS123 | N-Channel Enhancement Mode Field Effect Tramsistor Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
BSS123 | N-Channel MOSFET Features ● VDS (V) = 100V ● ID = 0.17 A (VGS = 10V) ● RDS(ON) | YFWDIODE 佑风微电子 | ||
BSS123 | N-Channel Enhancement Mode Power MOSFET FEATURE ● Pb-Free Package is available. | LEIDITECH 雷卯电子 | ||
BSS123 | 100V N-Channel Enhancement Mode MOSFET – ESD Protected Features RDS(ON) , VGS@10V, ID@170mA | PANJIT 強茂 | ||
BSS123 | N-channel TrenchMOS transistor Logic level FET FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Relay driver • High-spe | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
BSS123 | N-Channel Enhancement Mode MOSFET Features Low on-resistance High-speed switching Drive circuits can be simple Parallel use is easy | TECHPUBLIC 台舟电子 | ||
BSS123 | N-Channel 100-V(D-S) MOSFET FEATURE: ● Rugged and Relaible ● High density cell design for extremely low RDS(on) ● Surface Mount Package ● Voltage Controlled Small Signal Switch VDS(V)=100V ID = 0.17A (VGS =10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | ||
BSS123 | SOT-23 Plastic-Encapsulate MOSFETS FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable | DGNJDZ 南晶电子 | ||
BSS123 | N Channel MOSFET FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable | SY 顺烨电子 | ||
BSS123 | 包装:管件 描述:N-CHANNEL ENHANCEMENT MODE MOSFE 分立半导体产品 晶体管 - FET,MOSFET - 单个 | ANBONSEMI 安邦 | ||
BSS123 | N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件:202.46 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
BSS123 | N-Channel Enhancement Mode MOSFET 文件:1.07264 Mbytes Page:9 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | ||
BSS123 | N-channel TrenchMOS transistor 文件:29.38 Kbytes Page:4 Pages | Philips 飞利浦 | ||
BSS123 | SIPMOS??Small-Signal-Transistor Feature 文件:3.46577 Mbytes Page:8 Pages | Infineon 英飞凌 | ||
BSS123 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:367.31 Kbytes Page:4 Pages | DIODES 美台半导体 | ||
BSS123 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:128.61 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
BSS123 | SIPMOS Small-Signal-Transistor 文件:128.509 Kbytes Page:8 Pages | Infineon 英飞凌 | ||
100V N-Channel Enhancement Mode MOSFET – ESD Protected Features RDS(ON) , VGS@10V, ID@170mA | PANJIT 強茂 | |||
100V N-Channel Enhancement Mode MOSFET – ESD Protected Features RDS(ON) , VGS@10V, ID@170mA | PANJIT 強茂 | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp | DIODES 美台半导体 | |||
N-Channel 100-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | |||
N-Channel Enhancement Mode MOSFET Features • ESD protected gate • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel | CYSTEKEC 全宇昕科技 | |||
N-Channel Enhancement Mode MOSFET Features • ESD protected gate • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel | CYSTEKEC 全宇昕科技 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications | DIODES 美台半导体 | |||
NCE N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 100 V,ID = 0.17A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications | DIODES 美台半导体 | |||
N-Channel Enhancement Mode MOSFET Features • High ESD • Easily designed drive circuits • High speed switching • Low-voltage drive • Pb-free lead plating and halogen-free package • Easy to use in parallel | CYSTEKEC 全宇昕科技 | |||
MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The BSS123L is available in SOT 23 p ackage FEATURES Available in SOT 23 p ackage | AITSEMI 创瑞科技 | |||
TMOS FET Transistor(N-Channel) TMOS FET Transistor N–Channel | Motorola 摩托罗拉 | |||
Power MOSFET 170 mAmps, 100 Volts Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Power MOSFET 170 mAmps, 100 Volts Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Power MOSFET 170 mAmps, 100 Volts Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Power MOSFET 170 mAmps, 100 Volts Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Power MOSFET 170 mAmps, 100 Volts Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Power MOSFET 170 mAmps, 100 Volts Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Power MOSFET 170 mAmps, 100 Volts Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
OptiMOS??Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant, Halogen free | Infineon 英飞凌 | |||
N-CHANNEL MOSFET Description The BSS123N3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High speed switching • Low-voltage drive(2.5V) • Easily designed drive circuits • Pb-free lead plating and halogen-free package | CYSTEKEC 全宇昕科技 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat | DIODES 美台半导体 | |||
MOSFET Features • ESD protected gate • High speed switching • Pb-free lead plating and halogen-free package • Easily designed drive circuits • Low-voltage drive • Easy to use in parallel | COMCHIP 典琦 | |||
N-Channel Power MOSFET FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits | TSC 台湾半导体 | |||
N-Channel MOSFET FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable APPLICATION Small Servo Motor Controls Power MOSFET Gate Drivers Switching Application | GWSEMI 唯圣电子 |
BSS123产品属性
- 类型
描述
- 型号
BSS123
- 功能描述
MOSFET SOT-23 N-CH LOGIC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
恩XP |
2016+ |
SOT23 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TI |
23+ |
SOP |
12000 |
全新原装假一赔十 |
|||
FAIRCHILD/仙童 |
25+ |
SOT-23 |
154502 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
25+ |
SOT-23 |
37758 |
DIODES/美台全新特价BSS123-7-F即刻询购立享优惠#长期有货 |
|||
INFINEON |
04+ |
SOT23/ |
2110 |
全新原装进口自己库存优势 |
|||
INFIEON |
24+ |
SOT-23 |
2987 |
绝对全新原装现货供应! |
|||
OTHER/其它 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
|||
23+ |
NA |
12328 |
原装正品价格优惠,长期优势供应 |
||||
恩XP |
24+ |
SOT23 |
8950 |
BOM配单专家,发货快,价格低 |
|||
恩XP |
24+ |
SOT-23 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
BSS123规格书下载地址
BSS123参数引脚图相关
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- BSR58,215
- BSR58
- BSR57,215
- BSR57
- BSR56,215
- BSR56
- BSR52
- BSR50
- BSR43TA
- BSR43,115
- BSR43
- BSR41,115
- BSR33TA
- BSR33,135
- BSR33,115
BSS123数据表相关新闻
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