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BSS123W价格
参考价格：￥0.1437
型号：BSS123W-7-F 品牌：Diodes 备注：这里有BSS123W多少钱，2024年最近7天走势，今日出价，今日竞价，BSS123W批发/采购报价，BSS123W行情走势销售排行榜，BSS123W报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BSS123W | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInp | DIODESDiodes Incorporated 达尔科技 |  |   |
BSS123W | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice,Note3and4 | DIODESDiodes Incorporated 达尔科技 | | |
BSS123W | N-ChannelLogicLevelEnhancementModeFieldEffectTransistor Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
BSS123W | SOT-323Plastic-EncapsulateMOSFETS FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
BSS123W | N-ChannelEnhancementModeMOSFET 文件：1.07264 Mbytes Page：9 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd |  | |
BSS123W | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：92.42 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice,Note3and4 | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice,Note3and4 | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpe | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpe | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：92.42 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：231.12 Kbytes Page：5 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：92.42 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
CustomerSpecification Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled | ALPHAWIREAlpha Wire 阿尔法电线 |  | | |
CustomerSpecificationS Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled | ALPHAWIREAlpha Wire 阿尔法电线 | | | |
M.2Socket,H2.1AKey0.5PitchG/F,Black,Reel PerformanceandDescriptions: Theproductisdesignedtomeettheelectrical,mechanicalandenvironmentalperformancerequirementsspecification.Unlessotherwisespecified,alltestsareperformedatambientenvironmentalconditions. | ATTEND ATTEND Technology Inc. |  | | |
GeneralPurposeTweezers 文件：3.67611 Mbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
3.6V/400mAh 文件：207.43 Kbytes Page：1 Pages | DBLECTRODB Lectro Inc 迪贝电子迪贝电子（上海）有限公司 |  | |
BSS123W产品属性
- 类型
描述
- 型号
BSS123W
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILDONSEMICONDUCTOR |
23+ |
NA |
9000 |
原装现货,专业配单专家 |
|||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
DIODES |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
|||
DIODES/美台 |
23+ |
SOT-323 |
918000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON |
21+ |
SOT323 |
12000 |
原装现货假一赔十 |
|||
ON Semiconductor |
22+ |
3441 |
全新原装深圳现货 |
||||
DIODES |
2015+ |
SOT323 |
995300 |
原装现货价格优势-含16%增值税 |
|||
ON |
2023+ |
SOT323 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
DIODES |
2020+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
BSS123W芯片相关品牌
BSS123W规格书下载地址
BSS123W参数引脚图相关
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BSS123W数据表相关新闻
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MCP6024-I/P BSS138L TS922IDT BTS452RATMA1
2023-5-24BSS138DW-7-F
BSS138DW-7-F品牌DIODES/美台数量1000封装：SOT-363-6
2021-11-29BSS123
BSS123
2021-7-30BSS138
BSS138
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BSS123
2020-9-27BSR17R，BSR18AR，BSR18B，BSR18B(T93)，
BSR17R，BSR18AR，BSR18B，BSR18B(T93)，
2020-4-2
DdatasheetPDF页码索引
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