BSS123W价格
参考价格：￥0.1437
型号：BSS123W-7-F 品牌：Diodes 备注：这里有BSS123W多少钱，2026年最近7天走势，今日出价，今日竞价，BSS123W批发/采购报价，BSS123W行情走势销售排行榜，BSS123W报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BSS123W | N-Channel Logic Level Enhancement Mode Field Effect Transistor Description This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-c | FAIRCHILD 仙童半导体 |   | |
BSS123W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp | DIODES 美台半导体 | | |
BSS123W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device, Note 3 and 4 | DIODES 美台半导体 | | |
BSS123W | N-Channel Power MOSFET FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits | TSC 台湾半导体 | | |
BSS123W | 丝印代码：123；SOT-323 Plastic-Encapsulate MOSFETS FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable | DGNJDZ 南晶电子 | | |
BSS123W | 丝印代码：K23；N-Channel MOSFET FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable APPLICATION Small Servo Motor Controls Power MOSFET Gate Drivers Switching Application | GWSEMI 唯圣电子 | | |
BSS123W | 丝印代码：B123.；N-Channel Enhancement Mode MOSFET 文件：1.07264 Mbytes Page：9 Pages | FUTUREWAFER | | |
BSS123W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：92.42 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
BSS123W | MOSFETs | MCC | | |
BSS123W | 场效应晶体管 | CHINABASE 创基电子 | | |
BSS123W | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device, Note 3 and 4 | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device, Note 3 and 4 | DIODES 美台半导体 | | ||
Plastic-Encapsulate MOSFET Features TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter. | HUIXIN 慧芯电子 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Spe | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Spe | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：92.42 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：231.12 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：92.42 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
Silicon NPN Transistor General Purpose Audio Amplifier, Switch Silicon NPN Transistor General Purpose Audio Amplifier, Switch | NTE | | ||
Dual Retriggerable Monostable Multivibrator 文件：198.33 Kbytes Page：6 Pages | NSC 国半 | | ||
3-Amp, 5-Volt Positive Regulator 文件：203.43 Kbytes Page：8 Pages | NSC 国半 | | ||
3-Amp, 5-Volt Positive Regulator 文件：203.43 Kbytes Page：8 Pages | NSC 国半 | | ||
3-Amp, 5-Volt Positive Regulator 文件：203.43 Kbytes Page：8 Pages | NSC 国半 | |
BSS123W产品属性
- 类型
描述
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
100
- VGS Max (V)：
±20
- VGS(th) Max (V)：
2
- ID Max (A)：
0.17
- PD Max (W)：
0.2
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
10000
- RDS(on) Max @ VGS = 10 V(mΩ)：
6000
- Qg Typ @ VGS = 10 V (nC)：
1.1
- Ciss Typ (pF)：
71
- Package Type：
SC-70-3/SOT-323-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES |
24+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
DIODES |
24+ |
SOT323 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
DIODES/美台 |
23+ |
SOT-323 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
DIODES/美台 |
25+ |
SOT-323 |
918000 |
明嘉莱只做原装正品现货 |
|||
Diodes |
24+ |
SOT-323 |
7500 |
||||
DIODES |
24+ |
SOT-323 |
66316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES(美台) |
SOT-323-3 |
5240 |
全新原装正品现货可开票 |
||||
DIODES |
16+ |
SOT323 |
66540 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
三年内 |
1983 |
只做原装正品 |
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DdatasheetPDF页码索引
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