Smart High-Side Power Switch

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Smart Power High-Side-Switch

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Smart High Side Switches - 400m? 5-34V 0,4A, P-DSO-8

Smart High-Side Power Switch

文件：362.36 Kbytes Page：19 Pages

Smart Power High-Side-Switch

文件：376.66 Kbytes Page：17 Pages

Smart High-Side Power Switch

文件：278.12 Kbytes Page：18 Pages

汽车级智能高边开关 | PROFET™

Smart High Side Switches - 400mΩ, 5-34V 0,4A, P-DSO-8

Smart High-Side Power Switch

文件：278.12 Kbytes Page：18 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 PDSO-8 集成电路（IC） 配电开关，负载驱动器

Smart High-Side Power Switch

文件：238.34 Kbytes Page：17 Pages

Smart Power High-Side-Switch

文件：358.3 Kbytes Page：16 Pages

Smart High-Side Power Switch

文件：238.34 Kbytes Page：17 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 PDSO-8 集成电路（IC） 配电开关，负载驱动器

CMOS Low Voltage 2ohm SPST Switches in SC70 Packages

GENERAL DESCRIPTION The ADG741/ADG742 are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater tha

CMOS Low Voltage 2ohm SPST Switches in SC70 Packages

GENERAL DESCRIPTION The ADG741/ADG742 are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater tha

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

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Integrated Circuit TV Sound Channel, 2W

Description: The NTE742 is designed for use as the entire sound function in television receivers or FM table radios. The NTE742 sound channel will directly drive a 16 ohm speaker with more than 2 watts output. This monolithic integrated circuit will operate from a single 18V to 28V power supply a

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re