P-channel enhancement mode vertical D-MOS transistors

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. FEATURES • Direct interface to C-MOS, TTL etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in telephone sets and for applications i

P-channel vertical D-MOS intermediate level FET

Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 3.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package ha

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 1000 Volt CURRENT 3 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Glass passivated junction • Fast switching for high efficiency. • Lead free in compliance with EU RoHS

Negative Regulator

文件：161.59 Kbytes Page：6 Pages

Negative Regulator

文件：161.59 Kbytes Page：6 Pages