P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

P-channel enhancement mode vertical D-MOS transistor

P-channel enhancement mode vertical D-MOS transistor

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 2.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Glass passivated junction • Exceeds environmental standards of MIL-S-19500/228 • Fast switching for high efficiency. • Both normal and Pb free

PLASTIC SILICON RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES • Low cost • High current capability • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • 2.0 ampere operation at TA = 55°C with no thermal runawa

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Negative Regulator

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