N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

7/8 (22.2 mm) Single Turn Wirewound, Precision Potentiometer

FEATURES • Rugged, high-quality, all metal housing • Short length behind panel 11/32 (8.76 mm) • Ohmic value range: 5  to 40 k • Extra taps available • Bushing and servo mount types • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RENESAS MCU

文件：887.26 Kbytes Page：135 Pages

Easy Identification and Tracing with 10-color Cable

文件：839.33 Kbytes Page：1 Pages

INTERCONNECT BATTERY HOLDERS

文件：355.08 Kbytes Page：1 Pages

NPN Power TRANSISTORS

文件：133.71 Kbytes Page：2 Pages