N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSP110 in SOT223. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Surface mount package. 3. Applications n Rela

N-channel TrenchMOS intermediate level FET

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1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

Commercial 3/4inch (19mm) Diameter, 1 1/2 and 2 watt Wirewound Variable Resistor

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Premier Supplier of Electronic Hardware

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PC board mounting and direct insert mounting available

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3 Phase Hi-Torque DC Brushless Motor

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