N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown

N-channel enhancement mode vertical D-MOS transistor

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 3 BLUE 2 WHITE 4 BLACK 2) Cable Assembly 4 Components Cabled a) Twists: 5.3 Twist

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 3 BLUE 2 WHITE 4 BLACK 2) Cable Assembly 4 Components Cabled a) Twists: 5.3 Twist

Network Chip Resistors

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Precision Wirewound Resistors

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