位置：首页 > IC中文资料第409页 > BSM150GB120DN2F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate | SIEMENS 西门子 |   | ||
IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate | EUPEC | |
BSM150GB120DN2F产品属性
- 类型
描述
- 型号
BSM150GB120DN2F
- 功能描述
IGBT 模块 IGBT 1200V 150A
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EUPEC |
25+ |
150A/1200V/I |
50 |
全新原装、诚信经营、公司现货销售 |
|||
INFINEON |
25+ |
MOUDLE |
100 |
原厂原装,价格优势 |
|||
INFINEON |
25+23+ |
MODULE |
35435 |
绝对原装正品全新进口深圳现货 |
|||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
EUPEC-欧派克 |
2023+ |
模块 |
50000 |
原装现货 |
|||
EUPEC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
欧派克 |
24+ |
201 |
现货供应 |
||||
INFINEON |
MODULE |
7562 |
一级代理 原装正品假一罚十 价格优势 实单带接受价 |
||||
EUPEC
|
10+ |
主营模块 |
200 |
全新原装,绝对正品,现货供应 |
|||
欧派克 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
BSM150GB120DN2F芯片相关品牌
BSM150GB120DN2F规格书下载地址
BSM150GB120DN2F参数引脚图相关
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BSM150GB120DN2F数据表相关新闻
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DdatasheetPDF页码索引
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