位置：首页 > IC中文资料第409页 > BSM150GB120DN2
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BSM150GB120DN2 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate | SIEMENS 西门子 |   | |
BSM150GB120DN2 | IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate | eupec | | |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate | SIEMENS 西门子 | | ||
封装/外壳：模块 包装：散装 描述：IGBT MOD 1200V 210A 1250W 分立半导体产品 晶体管 - IGBT - 模块 | Infineon 英飞凌 | |
BSM150GB120DN2产品属性
- 类型
描述
- 型号
BSM150GB120DN2
- 功能描述
IGBT 模块 1200V 150A DUAL
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
20+ |
原装模块 |
368 |
样品可出,原装现货 |
|||
INFINEON |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
EUPEC |
23+24 |
150A/1200V/2U |
2980 |
模块专业供货,优势现货,价格市场最优! |
|||
EUPEC |
22+ |
模块 |
8000 |
原装正品支持实单 |
|||
INFINEON |
2025+ |
模块 |
32560 |
原装优势绝对有货 |
|||
INFINEON/英飞凌 |
16+ |
IGBT |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon(英飞凌) |
2021/2022+ |
HalfBridge2 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON/英飞凌 |
23+ |
MODULE |
50000 |
全新原装正品现货,支持订货 |
BSM150GB120DN2芯片相关品牌
BSM150GB120DN2规格书下载地址
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BSM150GB120DN2数据表相关新闻
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2019-10-17
DdatasheetPDF页码索引
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