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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BSM150GB120DN2 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate | SIEMENS 西门子 |   | |
BSM150GB120DN2 | IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate | eupec | | |
BSM150GB120DN2 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) | Infineon 英飞凌 | | |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate | SIEMENS 西门子 | | ||
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) | Infineon 英飞凌 | | ||
封装/外壳：模块 包装：散装 描述：IGBT MOD 1200V 210A 1250W 分立半导体产品 晶体管 - IGBT - 模块 | Infineon 英飞凌 | |
BSM150GB120DN2产品属性
- 类型
描述
- 型号
BSM150GB120DN2
- 功能描述
IGBT 模块 1200V 150A DUAL
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EUPEC |
24+ |
模块 |
6430 |
原装现货/欢迎来电咨询 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
Infineon Technologies |
24+ |
Module |
1262 |
原厂原装正品现货,代理渠道,支持订货!!! |
|||
EUPEC |
23+24 |
模块 |
2980 |
模块专业供货,优势现货,价格市场最优! |
|||
Infineon |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEO |
18+ |
MODULE |
85600 |
保证进口原装可开17%增值税发票 |
|||
INFINEON |
25+ |
MODULE |
2 |
原装正品,假一罚十! |
|||
INFINEON |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
EUPEC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
BSM150GB120DN2芯片相关品牌
BSM150GB120DN2规格书下载地址
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BSM150GB120DN2数据表相关新闻
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深圳好佳好科技有限公司 电话：0755-82559658 QQ：1728142002
2019-10-17
DdatasheetPDF页码索引
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